Journal of Materials Science

, Volume 41, Issue 14, pp 4611–4616 | Cite as

FIB and TEM studies of interface structure in diamond–SiC composites

  • Joon Seok ParkEmail author
  • Robert Sinclair
  • David Rowcliffe
  • Margaret Stern
  • Howard Davidson


The microstructure of diamond–SiC interfaces was studied by transmission electron microscopy (TEM). Specimens were prepared by focused ion beam (FIB) etching from a diamond–SiC composite bulk material. The diamond–SiC interfaces were easily located by high contrast in FIB images of the bulk surface, and site-specific specimen preparation was possible. The possible origin of this high contrast in FIB images compared to SEM images is discussed. TEM images and electron diffraction patterns showed that the diamond and SiC crystals away from the interface region are relatively defect-free, but numerous defects are present at the diamond–SiC interface over a dimension of 600 nm, much larger than the physical interface.


Select Area Diffraction Pattern Diamond Particle High Resolution Transmission Electron Microscopy Imaging Transmission Electron Microscopy Specimen Copper Transmission Electron Microscopy 



This work was supported by Sun Microsystems and we highly appreciate their funding.


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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  • Joon Seok Park
    • 1
    Email author
  • Robert Sinclair
    • 1
  • David Rowcliffe
    • 2
  • Margaret Stern
    • 3
  • Howard Davidson
    • 4
  1. 1.Department of Materials Science and EngineeringStanford UniversityStanfordUSA
  2. 2.Skeleton Technologies AGLos OsosUSA
  3. 3.Sun MicrosystemsSan DiegoUSA
  4. 4.Isothermal Systems ResearchSan CarlosUSA

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