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Journal of Materials Science

, Volume 41, Issue 14, pp 4568–4603 | Cite as

Self-assembled nanowires on semiconductor surfaces

  • J. H. G. OwenEmail author
  • K. Miki
  • D. R. Bowler
Article

Abstract

A number of different families of nanowires which self-assemble on semiconductor surfaces have been identified in recent years. They are particularly interesting from the standpoint of nanoelectronics, which seeks non-lithographic ways of creating interconnects at the nm scale (though possibly for carrying signal rather than current), as well as from the standpoint of traditional materials science and surface science. We survey these families and consider their physical and electronic structure, as well as their formation and reactivity. Particular attention is paid to rare earth nanowires and the Bi nanoline, both of which self-assemble on Si(001).

Keywords

Scan Tunnelling Microscopy Scan Tunnelling Microscopy Image Step Edge Electron Localisation Function Scan Tunnelling Microscopy Measurement 

Notes

Acknowledgements

We are happy to acknowledge useful discussions with Chigusa Ohbuchi and Wataru Yashiro, as well as permission from various authors to reproduce figures as noted in the text. This study was performed through Special Coordination Funds for Promoting Science and Technology from the MEXT, Japan (ICYS and Active Atom-Wire Interconnects). DRB is funded by the Royal Society.

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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  1. 1.International Centre for Young Scientists and Nanomaterials LaboratoryNIMSTsukubaJapan
  2. 2.Department of Physics & AstronomyUniversity College LondonLondonUK
  3. 3.London Centre for NanotechnologyUniversity College LondonLondonUK

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