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Journal of Materials Science

, Volume 41, Issue 14, pp 4691–4694 | Cite as

Growth of highly c-axis oriented aluminum nitride thin films on β-tantalum bottom electrodes

  • M. AkiyamaEmail author
  • N. Ueno
  • K. Nagao
  • T. Yamada
Article

Abstract

We have investigated the influence of tantalum (Ta) bottom electrodes on the crystallinity and crystal orientation of aluminum nitride (AlN) thin films. AlN thin films and Ta electrodes were prepared by using rf magnetron sputtering method. The crystal structure of the Ta electrodes was tetragonal (β-Ta, a metastable phase) at room temperature. The crystallinity and orientation of the AlN thin films and Ta electrodes strongly depended on sputtering conditions. Especially, the crystallinity and crystal orientation of the Ta electrodes were influenced by their film thickness and the substrate temperature. When the thickness of the Ta bottom electrodes was 200 nm and the substrate temperature was 100 °C, the AlN thin films indicated high c-axis orientation (the full width at half maximum of rocking curve of 3.9°). The crystal orientation of the AlN film was comparable to that of AlN thin films deposited on face centered cubic (fcc) lattice structure metal, such as Au, Pt and Al, bottom electrodes.

Keywords

Substrate Temperature Crystal Orientation Bottom Electrode Piezoelectric Layer Aluminum Nitride 

Notes

Acknowledgements

We thank Dr. Tateyama of AIST kyushu center for valuable advice on crystal growth mechanism and for information on making thin films.

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Copyright information

© Springer Science+Business Media, LLC 2006

Authors and Affiliations

  1. 1.On-site Sensing and Diagnosis Research LaboratoryNational Institute of Advanced Industrial Science and TechnologyTosu, SagaJapan
  2. 2.Ube Research Laboratory, Corporate Research & DevelopmentUbe Industries LtdUbe, YamaguchiJapan

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