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Journal of Materials Science

, Volume 41, Issue 2, pp 317–322 | Cite as

Influence of the polymer dielectric characteristics on the performance of a quaterthiophene organic field-effect transistor

  • K. N. Narayanan Unni
  • Sylvie Dabos-Seignon
  • Jean-Michel Nunzi
Article

Abstract

Organic field-effect transistors were fabricated with quaterthiophene as the active material and various polymeric dielectrics as the gate insulator. The conduction parameters such as mobility, threshold voltage, subthreshold swing, the maximum density of surface states etc. were found out. The performances of the devices were compared with respect to the dielectric constant, thickness and surface morphology of the gate insulator and the leakage current through the gate. Out of the three dielectrics investigated viz. parylene-C, cyanoethylpullulan and poly(methylmethacrylate); parylene-C was found to be best suited for applications in organic FETs.

Keywords

Polymer Dielectric Constant Surface Morphology Surface State Leakage Current 

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Copyright information

© Springer Science + Business Media, Inc. 2006

Authors and Affiliations

  • K. N. Narayanan Unni
    • 1
  • Sylvie Dabos-Seignon
    • 1
  • Jean-Michel Nunzi
    • 1
  1. 1.Laboratoire des Proprietés Optiques des Matériaux et Applications, UMR CNRS 6136Université AngersAngers CedexFrance

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