Journal of Materials Science

, Volume 41, Issue 2, pp 431–435 | Cite as

Influence of substrate temperature on ultraviolet emission of ZnO films prepared by ultrasonic spray pyrolysis

  • Mu Hee Choi
  • Tae Young MaEmail author


ZnO films were deposited on MgO substrates (ZnO/MgO) by ultrasonic spray pyrolysis. Substrate temperature varied from 200 to 350°C. The crystallographic properties and surface morphologies of the ZnO/MgO films were studied by X-ray diffraction and scanning electron microscopy. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the substrate temperature and the ambient temperature. Ultraviolet (UV) emission peak (3.37 eV) was dominantly detected at 18 K, which sustained at 300 K with a reduced value of the peak energy. The ZnO/MgO films prepared at 350°C showed the strongest UV emission peak at 18 and 300 K among the films in this study.


Polymer Scanning Electron Microscopy Pyrolysis Ambient Temperature Surface Morphology 


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  1. 1.
    C. H. KWON, H.-K. HONG, D. H. YUN, K. S.-T. KIM, Y.-H. RHO and B.-H. LEE, Sensors Actuators B 24/25 (1995) 610.CrossRefGoogle Scholar
  2. 2.
    T. Y. MA and S. C. LEE, J. Mater. Sci. 11 (2000) 305.Google Scholar
  3. 3.
    K. H. KIM, K. C. PARK and T. Y. MA, J. Appl. Phys. 81 (1997) 7764.CrossRefGoogle Scholar
  4. 4.
    S. SHIRAKATA, T. SAKEMI, K. AWAI and T. YAMAMOTO, Thin Solid Films 451/452 (2004) 212.CrossRefGoogle Scholar
  5. 5.
    Y. CHEN, N. T. TUAN, YUSABURO SEGAWA, H.-J. KO, S.-K. HONG and T. YAO, Appl. Phys. Lett. 78 (2001) 1469.CrossRefGoogle Scholar
  6. 6.
    C. BOEMARE, T. MONTEIRO, M. J. SOARES, J. G. GUILHERME and E. ALVES, Physica B 308–310 (2001) 985.CrossRefGoogle Scholar
  7. 7.
    H. KUMANO, A. A. ASHRAFI, A. UETA, A. AVRAMESCU and I. SUEMUNE, J. Cryst. Growth 214/215 (2000) 280.CrossRefGoogle Scholar
  8. 8.
    Y. CHEN, D. BAGNALL and T. YAO, Mater. Sci. Eng. B 75 (2000) 190.CrossRefGoogle Scholar
  9. 9.
    X. T. ZHANG, Y. C. LIU, Z. Z. ZHI, J. Y. ZHANG, Y. M. LU, D. Z. SHEN, W. XU, X. W. FAN and X. G. KONG, J. Lumin. 99 (2002) 149.CrossRefGoogle Scholar
  10. 10.
    D. C. REYNOLDS, C. W. LITTON and T. C. COLLINS, Phys. Rev. 140 (1965) A1726.CrossRefGoogle Scholar
  11. 11.
    C. KLINGSHIRM, Phys. Stat. Sol. (b) 71 (1975) 547.CrossRefGoogle Scholar
  12. 12.
    J. GUTOWSKI, N. PRESSER and I. BROSER, Phys. Rev. B 38 (1989) 9746.CrossRefGoogle Scholar
  13. 13.
    S. A. STUDENIKIN, M. COCIVERA, W. KELLNER and H. PASCHER, J. Lumin. 91 (2000) 223.CrossRefGoogle Scholar
  14. 14.
    K. VANHEUSDEN, C. H. SEAGER, W. L. WARREN, D. R. TALLANT and J. A. VOIGT, Appl. Phys. Lett. 68 (1996) 403.CrossRefGoogle Scholar
  15. 15.
    H. S. KANG, J. S. KANG, S. S. PANG, E. S. SHIM, S. Y. LEE, Mater. Sci. Eng. B 102 (2003) 313.CrossRefGoogle Scholar
  16. 16.
    T. MINAMI, H. NANTO and S. TAKADA, Jpn. J. Appl. Phys. 24 (1985) L605.CrossRefGoogle Scholar
  17. 17.
    M. OHYAMA, H. KOZUKA and T. YOKO, Thin Solid Films 306 (1997) 78.CrossRefGoogle Scholar
  18. 18.
    A. C. JONES, S. A. RUSHWORTH and J. AULD, J. Cryst. Growth 146 (1995) 503.CrossRefGoogle Scholar
  19. 19.
    K. T. RAMAKRISHNA REDDY and R. W. MILES, J. Mater. Sci. Lett. 17 (1998) 279.CrossRefGoogle Scholar
  20. 20.
    TOMOAKI TERASAKO, SHO SHIRAKATA and TETSUYA KARIYA, Thin Solid Films 420/421 (2002) 13.CrossRefGoogle Scholar
  21. 21.
    D. M. BAGNALL, Y. F. CHEN, M. Y. SHEN, Z. ZHU, T. GOTO and T. YAO, J. Cryst. Growth 184/185 (1998) 605.CrossRefGoogle Scholar
  22. 22.
    T. MAKINO, C. H. CHIA, N. T. TUAN, Y. SEGAWA, M. KAWASAKI, A. OHTOMA, K. TAMURA, H. KOINUMA, Appl. Phys. Lett. 76 (2000) 3549.CrossRefGoogle Scholar
  23. 23.
    P. ZU, Z. K. TANG, G. K. L. WONG, M. KAWASAKI, A. OHTOMO, H. KOINUMA and Y. SEGAWA, Solid State Commune. 103 (1997) 459.CrossRefGoogle Scholar
  24. 24.
    T. Y. MA and D. K. SHIM, Thin Solid Films 410 (2002) 8.CrossRefGoogle Scholar
  25. 25.
    A. YAMAMOTO, K. MIYAJIMA, T. GOTO, H. J. KO and T. YAO, Phys. Stat. Sol. (b) 229 (2002) 871.CrossRefGoogle Scholar
  26. 26.
    K. P. O' DONELL and X. CHEN, Appl. Phys. Lett. 58 (1991) 2924.CrossRefGoogle Scholar
  27. 27.
    M. O'NEILL, M. OESTRIECH, W. W. RUHLE and D. E. ASHENFORD, Phys. Rev. B 48 (1993) 8980.CrossRefGoogle Scholar
  28. 28.
    E. MOLLWO, in “Semiconductors: physics of II--VI and I--VII compounds” (Springer, Berlin, 1982) p. 35.Google Scholar

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© Springer Science + Business Media, Inc. 2006

Authors and Affiliations

  1. 1.Department of Electrical Engineering & Research Institute of Computer Information CommunicationGyeongsang National UniversityJinjuSouth Korea

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