Abstract
Metallization layers with thicknesses well below a micron are needed for future generation multilayer ceramic devices such as capacitors and integrated passive components. In many cases, the limiting thickness for the electrode is governed by dewetting of the metals from the oxide surface. Therefore, thin, stable metallization layers with low electrical resistivities that can survive high processing temperatures are of interest for these applications. For this purpose, Cu films prepared from 2-methoxyethanol-based solutions were developed using adhesion promoters such as Ti, Zn, and Zr. The solutions were spun onto BaTiO3/SiO2/Si or SiO2/Si substrates, pyrolyzed, and annealed in a reducing ambient. The microstructure of films prepared in this way was found to be uniform and continuous at thicknesses as low as 80 nm. Cu films modified with 15 mol% Zr had electrical resistivities of about 16–17 μΩ-cm after 500°C annealing and 5–6 μΩ-cm after annealing at 900°C in a reducing ambient.
Similar content being viewed by others
References
H. Kishi, Y. Mizuno, H. Chazono, Base–metal electrode-multilayer ceramic capacitors: past, present and future perspectives Jpn. J. Appl. Phys. 42(1), 1–15 (2003), Part 1
C.A. Randall, Scientific and Engineering issues of the state-of-the-art and future multilayer capacitors J. Ceram. Soc. Jpn. 109(1), S2–S6 (2001)
M. Randall, D. Skamser, T. Kinard, J. Qazi, A. Tajuddin, S. Trolier-McKinstry, C. A. Randall, S. W. Ko, T. Dechakupt, Thin Film MLCC, CARTS 2007 (2007)
J.W. Crownover, US Patent No. 5,254,360 (1993)
Y. Sakabe, Development of dielectric ceramics for nickel electrode multilayer capacitors J. Jpn. Soc. Powder Powder Metallurgy 51(4), 274–284 (2004)
J.T. Dawley, P.G. Clem, Dielectric Properties of random and <100> oriented SrTiO3 and (Ba,Sr)TiO3 thin films fabricated on <100> nickel tapes Appl. Phys. Lett. 81(16), 3028–3030 (2002). doi:10.1063/1.1516630
H. Nagata, S.W. Ko, E. Hong, C.A. Randall, S. Trolier-McKinstry, P. Pinceloup et al., Microcontact printed BaTiO3 and LaNiO3 thin films for capacitors J. Am. Ceram. Soc. 89(9), 2816–2821 (2006)
T. Dechakupt, G. Yang, C.A. Randall, I. Reaney, S. Trolier-McKinstry, Chemical solution-deposited BaTiO3 thin films on Ni foils: microstructure and interfaces J. Am. Ceram. Soc. 91(6), 1845–1850 (2008). doi:10.1111/j.1551-2916.2008.02407.x
J. Ihlefeld, B. Laughlin, A. Hunt-Lowery, W. Borland, A. Kingon, J.-P. Maria, Copper compatible barium titanate thin films for embedded passives J. Electroceram. 14, 95–102 (2005). doi:10.1007/s10832-005-0866-6
J. Ihlefeld, W. Borland, J.-P. Maria, Enhanced dielectric and crystalline properties in ferroelectric barium titanate thin films Adv. Funct. Mater. 17, 1199–1203 (2007). doi:10.1002/adfm.200601159
W. Borland, J. Ihlefeld, A.I. Kingon, J.-P. Maria, Thin film dielectric for capacitors and methods of making thereof. U.S. Patent 7,029,971, April 18, 2006
Y. Sakabe, Y. Takeshima, K. Tanaka, Multilayer ceramic capacitors with thin (Ba,Sr)TiO3 Layers by MOCVD J. Electroceram. 3(2), 115–121 (1999). doi:10.1023/A:1009986825169
Y. Yamashita, H. Yamamoto, Y. Sakabe, Dielectric properties of BaTiO3 thin films derived from clear emulsion of well-dispersed nanosized BaTiO3 particles Jpn. J. Appl. Phys. 43(9B), 6521–6524 (2004). doi:10.1143/JJAP.43.6521
M.M. Watt, P. Woo, T. Rywak, L. McNeil, A. Kassam, V. Joshi, et al., Feasibility demonstration of a multi-level thin film BST capacitor technology. ISAF 98, Proceedings of the Eleventh IEEE International Symposium 11–14 (1998)
G.L. Brennecka, B.A. Tuttle, Fabrication of ultrathin film capacitors fabricated by chemical solution deposition J. Mater. Res. 22(10), 2868–2874 (2007). doi:10.1557/jmr.2007.0371
G.L. Brennecka, C.M. Parish, B.A. Tuttle, L.N. Brewer, Multilayer thin and ultrathin film capacitors fabricated by chemical solution deposition J. Mater. Res. 23(1), 176–181 (2008). doi:10.1557/jmr.2008.0010
S. Miyake, K. Yamamoto, S. Fujihara, T. Kimura, (100)-orientation of pseudocubic perovskite-type LaNiO3 thin films on glass substrates via the sol–gel process J. Am. Ceram. Soc. 85, 992–994 (2002)
J. Li, J.W. Mayer, E.G. Colgan, Oxidation and protection in copper and copper alloy thin films J. Appl. Phys. 70(5), 2820–2827 (2002). doi:10.1063/1.349344
H.K. Liou, J.S. Huang, K.N. Tu, Oxidation of Cu and Cu3Ge thin films J. Appl. Phys. 77(10), 5443–5445 (1995). doi:10.1063/1.359238
P. Shen, H. Fujii, K. Nogi, Wetting, adhesion and diffusion in Cu–Al/SiO2 system at 1473K Scr. Mater. 52, 1259–1263 (2005). doi:10.1016/j.scriptamat.2005.02.019
M. Hu, S. Noda, T. Okubo, H. Komiyama, Wettability and crystalline orientation of Cu nanoislands on SiO2 with a Cr underlayer Appl. Phys. A 79, 625–628 (2004). doi:10.1007/s00339-004-2604-3
S.-F. Wang, T.C.K. Yang, S.-C. Lee, Wettability of Electrode Metals on Barium Titanate Substrate J. Mater. Sci. 36, 825–829 (2001). doi:10.1023/A:1004862011318
D.P. Cann, J.-P. Maria, C.A. Randall, Relationship between wetting and electrical contact properties of pure metals and alloys on semiconducting barium titanate ceramics J. Mater. Sci. 36, 4969–4976 (2001). doi:10.1023/A:1011817128242
R. Standing, M. Nicholas, The wetting of alumina and vitreous carbon by copper–tin–titanium alloys J. Mater. Sci. 13, 1509–1514 (1978). doi:10.1007/BF00553207
A. Kar, S. Mandal, S. Rathod, A.K. Ray, Effect of Ti diffusivity on the formation of phases in the interface of alumina–alumina brazed with 97(Ag40Cu)3Ti filler alloy. Proceedings the 3rd international brazing and soldering conference. April 24–26 San Antonio, Texas, USA (2006).
M. Hu, S. Noda, T. Okubo, H. Komiyama, Wettability and crystalline orientation of Cu nanoislands on SiO2 with a Cr Underlayer Appl. Phys. A 79, 625–628 (2004). doi:10.1007/s00339-004-2604-3
M. Hu, S. Noda, T. Okubo, Y. Yamaguchi, H. Komiyama, Structural and morphological control of nanosized Cu islands on SiO2 using a Ti underlayer J. Appl. Phys. 94(5), 3492–3497 (2003). doi:10.1063/1.1597972
P.B. Abel, A.L. Korenyi-Both, F.S. Honecy, S.V. Pepper, Study of copper on graphite with titanium or chromium bond layer J. Mater. Res. 9(3), 617 (1994). doi:10.1557/JMR.1994.0617
O.-K. Kwon, S.-H. Kwon, H.-S. Park, S.-W. Kang, PEALD of a ruthenium adhesion layer for copper interconnects J. Electrochem. Soc. 151(12), C753–C756 (2004). doi:10.1149/1.1809576
Z. Wang, O. Yaegashi, H. Sakaue, T. Takayuki, S. Shingubara, Highly adhesive electroless Cu layer formation using an ultra thin Ionized Cluster Beam (ICB)-Pd catalytic layer for sub-100nm Cu interconnections Jpn. J. Appl. Phys. 42, L1223–L1225 (2003). doi:10.1143/JJAP.42.L1223
F. Alvarez y Quintavalle, G.A. Battiston, U. Casellato, D. Fregona, R. Gerbasi, F. Loro, Conductive Cu-TiO2 thin films obtained via MOCVD J. Phys. IV Fr. 12, Pr4–Pr147 (2002)
N. Awaya, Y. Arita, Plasma-enhanced chemical vapor deposition of copper Jpn. J. Appl. Phys. 30, 1813–1817 (1991). doi:10.1143/JJAP.30.1813
J.Y. Kim, P.J. Reucroft, D.K. Park, Nucleation and growth of mechanisms of copper MOCVD film on Au/Si substrates Thin Solid Films 289, 184–191 (1996). doi:10.1016/S0040-6090(96)08908-0
C.J. Liu, J.S. Chen, Influence of Zr additives on the microstructure and oxidation resistance of Cu(Zr) thin films J. Mater. Res. 20(2), 496–503 (2005). doi:10.1557/JMR.2005.0068
J.-W. Lim, K. Mimura, M. Isshiki, Thickness dependence of resistivity for Cu films deposited by ion beam deposition Appl. Surf. Sci. 217, 95–99 (2003). doi:10.1016/S0169-4332(03)00522-1
D.P. Cann, C.A. Randall, Segregation in bimetallic alloys and its influence on wetting on a positive temperature coefficient resistor BaTiO3 ceramic J. Appl. Phys. 90(11), 5698–5702 (2001). doi:10.1063/1.1413237
D.P. Cann, C.A. Randall, The thermochemistry and non-ohmic electrical contacts of a BaTiO3 PTCR Ceramic IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44(6), 1405–1408 (1997). doi:10.1109/58.656645
K. Lee, Y.K. Lee, Irreversible hydrogen effects on resistivity of sputtered copper film J. Mater. Sci. 35, 6035–6040 (2000). doi:10.1023/A:1026727818193
A.F. Mayadas, R. Feder, R. Rosenberg, Resistivity and structure of evaporated aluminum films J. Vac. Sci. Technol. 6, 690–693 (1969). doi:10.1116/1.1315731
A.F. Mayadas, M. Shatzkes, Electrical-resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces Phys. Rev. B 1, 1382–1389 (1970). doi:10.1103/PhysRevB.1.1382
T.-H. Song, C.A. Randall, Copper cofire X7R dielectrics and multilayer capacitors based on zinc borate fluxed barium titanate ceramic J. Electroceram. 10, 39–46 (2003). doi:10.1023/A:1024028024779
J. Coates, Encyclopedia of Analytical Chemistry (Wiley, New York, 2000)
J.R. Martinez, G. Ortega-Zarzosa, O. Dominguez-Espinos, F. Ruiz, Low temperature devitrification of Ag/SiO2 and Ag(CuO)/SiO2 composites J. Non-cryst Solids 282, 317–320 (2001). doi:10.1016/S0022-3093(01)00346-5
A.I. Kingon, S. Srinivasan, Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications Nat. Mater. 4, 233–237 (2005). doi:10.1038/nmat1334
T.B. Massalski, Binary Alloy Phase Diagrams, 2nd edn. (ASM, Materials Park, OH, 1990)
Y. Hakotani, US Patent No., 5,004,715 (1991)
Acknowledgments
This work was supported by KEMET Electronics Corporation.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ko, S.W., Dechakupt, T., Randall, C.A. et al. Chemical solution deposition of copper thin films and integration into a multilayer capacitor structure. J Electroceram 24, 161–169 (2010). https://doi.org/10.1007/s10832-008-9551-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10832-008-9551-x