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Tight-binding description of graphene–BCN–graphene layered semiconductors

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Abstract

Based on density functional calculations, tight-binding models are proposed for few layers of three BCN allotropes sandwiched between two layers of graphene. The results pave the road toward investigation of the performance of novel nanoelectronic devices such as vertical tunneling field effect transistors and nanoscale sensors operating on the basis of quantum tunneling through these layered materials-based systems.

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Correspondence to Majid Sanaeepur.

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Ebrahimi, M., Horri, A., Sanaeepur, M. et al. Tight-binding description of graphene–BCN–graphene layered semiconductors. J Comput Electron (2020). https://doi.org/10.1007/s10825-019-01442-z

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Keywords

  • BCN
  • Graphene
  • Boron nitride
  • Tight-binding
  • DFT