Low on-resistance 4H-SiC UMOSFET with local floating superjunction

  • Jinyoung Goh
  • Kwangsoo KimEmail author


This paper introduces an improved on-resistance 4H-SiC UMOSFET structure. Compared to conventional p-shielding UMOSFETs, the proposed 4H-SiC UMOSFET with a local floating superjunction (LFS) exhibits lower on-resistance while maintaining a breakdown voltage of 1700 V. The structure has a superjunction located beneath the p-shielding. It was optimized for various parameters to reduce the on-resistance while maintaining the breakdown voltage. The on-resistances of a conventional UMOSFET and the optimized LFS-UMOSFET are 13.75 and 8.68 \( {\text{m}}\Omega \,{\text{cm}}^{2} \), respectively, when the gate voltage is 10 V. The proposed UMOSFET showed a 36.8% reduction in the specific on-resistance, the figure of merit was improved by 35.1%, and the maximum current density was improved by 29%. Also body diode characteristic and UIS test are confirmed. All the results are demonstrated by Sentaurus TCAD simulation.


4H-SiC UMOSFET Local floating superjunction On-resistance Breakdown voltage 



This research was supported by the KIAT (Korea Institute for the Advancement of Technology), supervised by the MOTIE (Ministry of Trade, Industry and Energy) (N0001594) and by the MSIT (Ministry of Science and ICT), Korea, under the ITRC (Information Technology Research Center) support program (IITP-2018-0-01421) supervised by the IITP (Institute for Information & communications Technology Promotion).


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Authors and Affiliations

  1. 1.Department of Electronic EngineeringSogang UniversitySeoulKorea

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