Journal of Computational Electronics

, Volume 18, Issue 4, pp 1214–1221 | Cite as

A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors

  • Khalil TamersitEmail author


As the channel length shrinks below the 10-nm regime, emerging materials, junctionless technology, and multiple-gate geometries provide an excellent combination to continue progress towards lower-cost high-performance ultrascaled devices. In this study, the double-gate junctionless (JL) graphene nanoribbon field-effect transistor (GNRFET) and its conventional counterpart (C-GNRFET) are compared in terms of short-channel effects (SCEs) using a quantum simulation. The computational approach is based on solving the Schrödinger equation using the mode-space nonequilibrium Green’s function formalism coupled self-consistently with a Poisson equation in the ballistic limit. The analysis of gate length downscaling shows that the JL GNRFET exhibits better leakage current, subthreshold swing (SS), drain-induced barrier lowering, and threshold voltage roll-off in comparison with the conventional GNRFET. In addition, we reveal that a decrease in the n-type doping concentration can enhance the above-mentioned characteristics of both devices. The results indicate that the JL GNRFET can mitigate critical issues and enhance the immunity to SCEs of the GNRFET, making it a promising candidate for high-performance ultrascaled (sub-5-nm) technology.


Junctionless (JL) Graphene nanoribbon (GNR) Field-effect transistor (FET) Nonequilibrium Green’s function (NEGF) Short-channel effects (SCEs) Band-to-band tunneling (BTBT) 



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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Department of Electronics and TelecommunicationsUniversité 8 Mai 1945 GuelmaGuelmaAlgeria

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