Journal of Computational Electronics

, Volume 18, Issue 4, pp 1469–1477 | Cite as

TCAD calibration and performance investigation of an ISFET-based TNT (explosive) sensor

  • Ayan Saikia
  • Ashish Raj
  • Rupam GoswamiEmail author


This article proposes a calibrated methodology as well as computational analyses for designing an explosive sensor for trinitrotoluene (TNT) detection using ion-sensitive field-effect transistor (ISFET) through technology computer-aided design (TCAD) tools. Although industrial device simulators are quite efficient in computing the various electrical parameters of a semiconductor device such as MOSFET, the absence of electrochemical models has posed a challenge to the investigation of ISFETs through TCAD simulations. A nanowire MOSFET has been calibrated using thirteen different concentrations of TNT from a fabricated sensor, and different sensitivities based on on current, threshold voltage and conductance have been proposed. The effect of gate oxide on the different sensitivities is also reported.


ISFET TNT Sensitivity Sensor TCAD Simulation 



The authors acknowledge the Oysters Laboratory, Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani, Pilani Campus, Rajasthan 333031, India, for the technical support.


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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Department of Electrical and Electronics EngineeringBirla Institute of Technology and Science PilaniPilaniIndia

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