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Impact of triple-material gate and highly doped source/drain extensions on sensitivity of DNA biosensors

  • M. Ouarghi
  • Z. Dibi
  • N. Hedjazi
Article
  • 6 Downloads

Abstract

Gate engineering and highly doped source/drain region have been investigated to design a new DNA sensor for use in biomedical applications based on a double gate (DG) dielectric modulated (DM) junctionless (JL) metal oxide semiconductor field effect transistor (MOSFET) with triple material (TM) gate. Based on the dielectric modulation effect, DNA molecules in the nanogap cavity change due to the charge density of biomolecules, producing a change in the threshold voltage of the device. Analytical and numerical analysis was carried out to reveal the impact of physical parameters on the sensitivity of the proposed biosensor. Various characteristics, such as the surface potential, threshold voltage, and drain current were also investigated. The effectiveness of the proposed TM-DG-DM-JL-MOSFET structure with highly doped source/drain extensions is confirmed by comparison of the results with those for a conventional single-materiel (SM) gate DM-JL-MOSFET, revealing a good improvement in sensitivity and making the proposed structure an attractive solution for use in DNA-based sensor applications.

Keywords

Biosensor Dielectric modulation DNA sensors DMFET Nanogap Sensitivity Triple-material gate Gate engineering 

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Laboratory of Advanced Automatic and Analysis of Systems (LAAAS), Department of ElectronicsUniversity of Batna2BatnaAlgeria

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