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Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation

  • N. P. MaityEmail author
  • Reshmi Maity
  • S. Maity
  • S. Baishya
Article
  • 36 Downloads

Abstract

A comparative analysis of the trigate fin-shaped field-effect transistor (FinFET) and quantum FinFET (QFinFET) is carried out by using density gradient quantization models in the Synopsys three-dimensional (3-D) technology computer-aided design (TCAD) platform. The gate dielectric stack comprising 0.5 nm SiO2 (k = 3.9) and 2 nm HfO2 (k = 22) contributes to an effective oxide thickness of 0.86 nm and is kept constant throughout the study. The results demonstrate that the QFinFET can overcome the limitations of current FinFET devices when scaling down to the atomic level. An analytical model including quantum-mechanical effects for evaluation of the drain current of the FinFET is established and validated using the TCAD software. The degradation in the drive current with downscaling of the fin thickness for the trigate FinFET and the increase in the drive current for the QFinFET are presented. The results are improved by taking into account different channel lengths and body thicknesses to estimate the drain current–gate voltage and gate capacitance–gate voltage characteristics for both the trigate FinFET and QFinFET. The drain-induced barrier lowering and subthreshold swing are also analyzed for the trigate FinFET and QFinFET at different technology nodes, revealing excellent characteristics. It is clearly established that the QFinFET can overcome the limitations faced by current FinFET devices when scaling the silicon down to the atomic level and may represent the next generation of FinFET devices.

Keywords

Trigate FinFET QFinFET DIBL SS TCAD 

Notes

Acknowledgements

The authors would like to thank Mr. Praveen Gunturi, National Institute of Technology, Silchar for his support of this technical work. The authors are highly indebted to TCAD Laboratory, National Institute of Technology, Silchar, India for supporting this technical work.

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  • N. P. Maity
    • 1
  • Reshmi Maity
    • 1
  • S. Maity
    • 2
  • S. Baishya
    • 3
  1. 1.Department of Electronics and Communication EngineeringMizoram University (A Central University, Government of India)AizawlIndia
  2. 2.Department of Electronics and Communication EngineeringTezpur University (A Central University, Government of India)TezpurIndia
  3. 3.Department of Electronics and Communication EngineeringNational Institute of TechnologySilcharIndia

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