Near-Band-Edge Emission of Mechanically Milled and Thermally Annealed ZnO:Ge Particles

  • H. N. Van
  • C. X. ThangEmail author
  • T. T. H. Tam
  • V. T. N. Minh
  • V.-H. PhamEmail author

This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized by mechanical milling of a ZnO and Ge powder mixture up to 50 h in particularly, using different ZnO:Ge ratios and annealing temperatures. The Ge-doped ZnO particles were observed to have a rounded morphology with a diameter of ~500 nm when an annealing temperature of 1000°C was used. The Ge-doped ZnO particles showed NBE emission of ~380 nm with a suppressed visible band of ~500 nm as a function of the Ge content and annealing temperatures. These results suggest that the current method is very useful for synthesis of Ge-doped ZnO particles to obtain NBE emission, which is of particular importance for potential application in the optoelectronic and UV detector field.


luminescence ZnO near-band-edge emission UV light 


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Authors and Affiliations

  1. 1.Phenikaa Research and Technology InstituteA&A Green Phoenix GroupHanoiVietnam
  2. 2.Phenikaa Institute for Advanced Study and Faculty of Materials Science and EngineeringPhenikaa UniversityHanoiVietnam
  3. 3.Advanced Institute for Science and Technology (AIST)Hanoi University of Science and Technology (HUST)HanoiVietnam
  4. 4.Institute for Economic Informatics TechnologyNational Economics UniversityHanoiVietnam
  5. 5.School of Chemical EngineeringHanoi University of Science and Technology (HUST)HanoiVietnam

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