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Low-temperature synthesis of GaN film from aqueous solution by electrodeposition

  • Jaewook KangEmail author
  • Takuaki Mitsuhashi
  • Kensuke Kuroda
  • Masazumi Okido
Research Article
Part of the following topical collections:
  1. Electrodeposition

Abstract

Gallium nitride (GaN) films were synthesized on n-type-Si (111) substrates using a low-cost and low-temperature technique of electrochemical deposition. The electrochemical behavior of Ga3+, NH4+, and NO3 ions in the aqueous solutions used as sources of GaN were confirmed by cyclic voltammetry. The scanning electron microscopy images showed that the films deposited at a current density of 3.5 mA cm−2 or greater have plate-like surface morphologies on the Si substrate. The energy-dispersive X-ray spectroscopy results showed that oxygen, gallium, and nitrogen coexist in these plate-like films. In the X-ray diffraction patterns, the sample synthesized at a current density of 3.5 mA cm−2 for 24 h exhibited peaks of gallium oxide and hexagonal-GaN phase. Photoluminescence analysis revealed a peak at 3.2 eV, which corresponds to the band gap energy of GaN, as well as a broad peak at around 2.5 eV at room temperature.

Graphic abstract

Keywords

Electrochemical deposition Cyclic voltammetry GaN Photoluminescence Low-cost technique 

Notes

Acknowledgements

We appreciate the assistance offered by H. Amano and Y. Honda of Nagoya University with experiments for PL measurement. This work was financially supported by the Grant-in-Aid for Challenging Exploratory Research (No. 16K14447) from the Japan Society for the Promotion of Science (JSPS).

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Copyright information

© Springer Nature B.V. 2019

Authors and Affiliations

  1. 1.Department of Materials Science & Engineering, Graduate School of EngineeringNagoya UniversityNagoyaJapan
  2. 2.Institute of Materials and Systems for SustainabilityNagoya UniversityNagoyaJapan

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