MOSFET Small-Signal Model Considering Hot-Carrier Effect for Millimeter-Wave Frequencies

  • Chenyang Li
  • Boon Chirn Chye
  • Yongkui Yang
  • Enyi YaoEmail author
  • Minoru Fujishima


The hot-carrier effect, which is caused by the generation of interface states, is the main degradation mechanism for MOSFETs. Predicting the degradation of circuit performance due to the hot-carrier effect is important for practical circuit design. In this paper, we propose a small-signal model considering the hot-carrier effect by establishing time-dependent model parameters, which is verified by small-signal simulation and measurement for 40-nm-process MOSFETs at millimeter-wave (mmW) frequencies. In the proposed small-signal model, the shift of relaxation time of the non-quasi-static (NQS) effect is investigated and verified for mmW frequencies for the first time. By comparing simulation and measurement results, it is shown that the shift of relaxation time of the NQS effect should be considered for the prediction of MOSFETs performance degradation at mmW frequencies.


Hot-carrier degradation Millimeter-wave NMOSFETs Non-quasi-static (NQS) effect Power amplifier 



  1. 1.
    C. Guerin, V. Huard, and A. Bravaix, “The energy-driven hot-carrier degradation modes of nMOSFETs,” IEEE Transactions on Device and Materials Reliability, vol. 7, pp. 225–235, June 2007.Google Scholar
  2. 2.
    S. E. Rauch, F. J. Guarin, and G. LaRosa, “Impact of E-E scattering to the hot carrier degradation of deep submicron NMOSFETs,” IEEE Electron Device Letters, vol. 19, pp. 463–465, Dec 1998.Google Scholar
  3. 3.
    S. Naseh, M. J. Deen, and O. Marinov, “Effects of hot-carrier stress on the RF performance of 0.18 μm technology NMOSFETts and circuits,” in Proc. of 40th Annual Reliability Physics Sposium Proceedings, pp. 98–104, 2002.Google Scholar
  4. 4.
    C. Hu, S. C. Tam, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, and K. W. Terrill, “Hot-electron-induced MOSFET degradation - model, monitor, and improvement,” IEEE Journal of Solid-State Circuits, vol. 20, pp. 295–305, Feb 1985.Google Scholar
  5. 5.
    I. Kurachi, N. Hwang, and L. Forbes, “Physical model of drain conductance, gd, degradation of NMOSFET’s due to interface state generation by hot carrier injection,” IEEE Transactions on Electron Devices, vol. 41, pp. 964–969, Jun 1994.Google Scholar
  6. 6.
    C. Hu, W. Liu, et al., “Bsim3v3. 2.2 mosfet model. usersí manual,” UC Berkley, 1999.Google Scholar
  7. 7.
    J.-T. Park, B.-J. Lee, D.-W. Kim, C.-G. Yu, and H.-K. Yu, “RF performance degradation in nMOS transistors due to hot carrier effects,” IEEE Transactions on Electron Devices, vol. 47, pp. 1068–1072, May 2000.Google Scholar
  8. 8.
    E. Takeda and N. Suzuki, “An empirical model for device degradation due to hot-carrier injection,” IEEE Electron Device Letters, vol. 4, pp. 111–113, Apr 1983.Google Scholar
  9. 9.
    B. Dubois, J. B. Kammerer, L. Hebrard, and F. Braun, “Analytical modeling of hot-carrier induced degradation of MOS transistor for analog design for reliability,” in Proc. of 8th International Symposium on Quality Electronic Design (ISQED), pp. 53–58, March 2007.Google Scholar
  10. 10.
    L. Negre, D. Roy, S. Boret, P. Scheer, N. Kauffmann, D. Gloria, and G. Ghibaudo, “Hot carrier impact on the small signal equivalent circuit,” in IEEE International Integrated Reliability Workshop Final Report, pp. 72–75, Oct 2010.Google Scholar
  11. 11.
    L. Negre, D. Roy, F. Cacho, P. Scheer, S. Boret, A. Zaka, D. Gloria, and G. Ghibaudo, “Aging of 40nm MOSFET RF parameters under RF conditions from characterization to compact modeling for RF design,” in Proc. of IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp. 1–4, 2011.Google Scholar
  12. 12.
    L. Negre, D. Roy, S. Boret, P. Scheer, D. Gloria, and G. Ghibaudo, “Advanced 45nm MOSFET small-signal equivalent circuit aging under DC and RF hot carrier stress,” in Proc. of IEEE International Reliability Physics Symposium (IRPS), pp. HV.1.1–HV.1.4, 2011.Google Scholar
  13. 13.
    A. Bravaix, V. Huard, D. Goguenheim, and E. Vincent, “Hot-carrier to cold-carrier device lifetime modeling with temperature for low power 40nm Si-bulk NMOS and PMOS FETs,” in Proc. of IEEE International Electron Devices Meeting (IEDM), pp. 27.5.1–27.5.4, 2011.Google Scholar
  14. 14.
    D. Ang, T. Phua, H. Liao, and C. Ling, “High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer n-MOSFET,” IEEE Electron Device Letters, vol. 24, no. 7, pp. 469–471, 2003.Google Scholar
  15. 15.
    K. Katayama, M. Motoyoshi, K. Takano, and M. Fujishima, “THz matrix-based layered wrapper model of common-source MOSFET,” in Extended Abstracts of the International Conference on Solid State Devices and Materials, Japan Society of Applied Physics, sep 2012.Google Scholar
  16. 16.
    K. Katayama, M. Motoyoshi, K. Takano, R. Fujimoto, and M. Fujishima, “Bias-voltage-dependent subcircuit model for millimeter-wave CMOS circuit,” IEICE transactions on electronics, vol. 95, no. 6, pp. 1077–1085, 2012.Google Scholar
  17. 17.
    S. P. Sinha, F. L. Duan, D. E. Ioannou, W. C. Jenkins, and H. L. Hughes, “Time dependence power laws of hot carrier degradation in SOI MOSFETs,” in Proc. of IEEE International SOI Conference, pp. 18–19, 1996.Google Scholar
  18. 18.
    C. C. Enz and C. Yuhua, “MOS transistor modeling for RF IC design,” IEEE Journal of Solid-State Circuits, vol. 35, no. 2, pp. 186–201, 2000.Google Scholar
  19. 19.
    M. Chan, K. Y. Hui, H. Chenming, and P. K. Ko, “A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation,” IEEE Transactions on Electron Devices, vol. 45, no. 4, pp. 834–841, 1998.Google Scholar
  20. 20.
    D. Ferry, Semiconductor transport. CRC Press, 2000.Google Scholar
  21. 21.
    T. Matsuoka, S. Taguchi, Q. D. M. Khosru, K. Taniguchi, and C. Hamaguchi, “Degradation of inversion layer electron mobility due to interface traps in metal-oxide-semiconductor transistors,” Journal of Applied Physics, vol. 78, no. 5, pp. 3252–3257, 1995.Google Scholar
  22. 22.
    Y. C. Cheng and E. A. Sullivan, “Effect of coulomb scattering on silicon surface mobility,” Journal of Applied Physics, vol. 45, no. 1, pp. 187–192, 1974.Google Scholar
  23. 23.
    Y. Matsumoto and Y. Uemura, “Scattering mechanism and low temperature mobility of MOS inversion layers,” Japanese Journal of Applied Physics, vol. 13, no. S2, p. 367, 1974.Google Scholar

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Authors and Affiliations

  1. 1.School of Electrical and Electronic EngineeringNanyang Technological UniversitySingaporeSingapore
  2. 2.Graduate School of Advanced Sciences of MatterHiroshima UniversityHiroshimaJapan

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