Optimization and development of the RF MEMS structures for low voltage, high isolation and low stress

  • Hamid Reza Ansari
  • Mojtaba Behnam TaghaddosiEmail author


MEMS capacitive switches have longer lifetimes compared to other types of metal-to-metal switches, and when placed on the membrane on the transmission line, they can easily return to the up-state due to a dielectric layer. They also transmit the input signal with more power and frequency and therefore, they are better than metal-to-metal switches. In this paper, first three switches were considered as the basic structures. Then, in order to demonstrate the credibility and high quality of the simulations, the same switches were simulated. The obtained results are very close to the results of fabrication of these switches. In the next step, with the presentation of three new structures, stimulation voltage, stress, switching time and isolation were improved in four steps. The mechanical simulation of the switch was performed to determine the amount of displacement, the amount of stress and the resonant frequency using the COMSOL software. In addition, electrical simulation of the switch was performed to obtain the S-parameter using the HFSS software. The simulation results demonstrate that the isolation is 57–66 dB and the insertion loss is 0.3–2 dB in the desired frequency band (1–50 GHz). Using new spring structures, the actuation voltage was reduced from 4.8 V in basic structures (the smallest in three structures) to 2.4 V in new structures, which is considered excellent. In order to increase the lifetime of the switch, the stress in the new switches is reduced from 12 to 4.5 MPa compared to the basic switches.


RF MEMS switch Low actuation voltage High isolation Low stress 



  1. 1.
    Rebeiz, G. M. (2003). RF MEMS: theory, design and technology (3rd ed.). New Jersey: Wiley.CrossRefGoogle Scholar
  2. 2.
    Rebeiz, G. M., et al. (2009). Tuning into RF MEMS. IEEE Microwave Theory and Techniques Society, 10, 55–72.CrossRefGoogle Scholar
  3. 3.
    Ansari, H. R., & Khosroabadi, S. (2018). Design and simulation of a novel RF MEMS shunt capacitive switch with a unique spring for Ka-band application. Microsystem Technologies, 25(2), 531–540.CrossRefGoogle Scholar
  4. 4.
    Ansari, H. R., & Khosroabadi, S. (2018). Low actuation voltage RF MEMS shunt capacitive switch with high capacitive ratio. In Iranian conference on electrical engineering (ICEE). Google Scholar
  5. 5.
    Khodadady, K., & Ganji, B. A. (2015). Design and modeling of a novel RF MEMS series switch with low actuation voltage. Microsystem Technologies, 22(12), 2921–2929.CrossRefGoogle Scholar
  6. 6.
    Molaei, S., & Ganji, B. A. (2017). Design and simulation of a novel RF MEMS shunt capacitive switch with low actuation voltage and high isolation. Microsystem Technologies, 23(6), 1907–1912.CrossRefGoogle Scholar
  7. 7.
    Mafinejad, Y., Kouzani, A. Z., Nassabi, M., Lim, Y., & Mafinezhad, K. (2015). Characterization and optimization to improve uneven surface on MEMS bridge fabrication. Displays, 37, 54–61.CrossRefGoogle Scholar
  8. 8.
    Premila, L. S., & Naga, M. (2016). Optimization of structures of DC RF MEMS series switches for low actuation. Microsystem Technologies, 23(7), 2371–2379.Google Scholar
  9. 9.
    Mafinejad, Y., Kouzani, A., Mafinezhad, K., & Hosseinnezhad, R. (2017). Low insertion loss and high isolation capacitive RF MEMS switch with low pull-in voltage. International Journal of Advanced Manufacturing Technology, 93, 661–670.CrossRefGoogle Scholar
  10. 10.
    Shekhar, S., Vinoy, K. J., & Ananthasuresh, G. K. (2017). Surface-micromachined capacitive RF switches with low actuation voltage and steady contact. Journal of Microelectromechanical Systems, 26, 643–652.CrossRefGoogle Scholar
  11. 11.
    Cho, I., & Yoon, E. (2010). Design and fabrication of a single membrane push-pull SPDT RF MEMS switch operated by electromagnetic actuation and electrostatic hold. Journal of Micromechanics and Microengineering, 20, 035028.CrossRefGoogle Scholar

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© Springer Science+Business Media, LLC, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Electrical Engineering DepartmentImam Reza International UniversityMashhadIran

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