A 2.99 dB NF 15.6 dB Gain 3-10GHz Ultra-wideband low-noise amplifier for UWB systems in 65 nm CMOS
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A low noise figure (NF) and high power gain (S21) 3–10 GHz ultra-wideband (UWB) low noise amplifier (LNA) in 65 nm CMOS technology is proposed for UWB system which has a high figure of merit. A shunt–shunt resistive feedback technique is used to achieve wideband input impedance matching. A differential current-reused structure is used to achieve high common noise suppression and low power consumption. The implemented LNA achieves a high and flat aS21 of 15.6 ± 1.07 dB with an input return loss (S11) which is better than − 8.7 dB and a low NF of 2.99 ± 0.18 dB at frequencies of 3–10 GHz. The measured input third-order intermodulation point (IIP3) is − 5.7 dBm at 6 GHz.
KeywordsCMOS Ultra-wideband (UWB) Low noise amplifier (LNA) Noise figure
The funding was provided by National Natural Science Foundation of China (Grand No. 61874082).
- 2.Galal, A. I. A., Pokharel, R. K., Kanay, H., et al. (2010). Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18 µm CMOS process. In Silicon monolithic integrated circuits in RF systems, IEEE, pp. 33–36.Google Scholar
- 4.Hsu, M. T., Hsieh, Y. C., & Ou, A. C. (2012). Design of low power UWB CMOS LNA using RC feedback and body-bias technology. In International conference on Asic, IEEE, pp. 1–4.Google Scholar
- 7.Nigam, S., & Sau, P. C. (2016). Design of UWB LNA using active resistors in 0.18 µm CMOS technology. In Communication, control and intelligent systems, IEEE, pp. 393–397.Google Scholar
- 8.Najari, O. E., Arnborg, T., & Alvandpour, A. (2010). Wideband inductorless LNA employing simultaneous 2nd and 3rd order distortion cancellation. In Norchip, IEEE, pp. 1–4.Google Scholar
- 9.Pan, Z., Qin, C., Ye, Z., et al. (2017). Wideband inductorless low-power LNAs with Gm enhancement and noise-cancellation. IEEE Transactions on Circuits and Systems I: Regular Papers,PP(99), 1.Google Scholar
- 10.Dai, R., Zheng, Y., He, J., et al. (2014). A 2.5-GHz 8.9-dBm IIP3 current-reused LNA in 0.18-μm CMOS technology. In IEEE international symposium on radio-frequency integration technology, IEEE, pp. 1–3.Google Scholar
- 11.Erfani, R., Marefat, F., & Ehsanian, M. (2014). Self-biased resistive-feedback current-reused CMOS UWB LNA with 1.7 dB nf for IR-UWB applications. In International conference on microelectronics, IEEE, pp. 132–135.Google Scholar
- 12.Guo, J. C., Lin, C. S., & Liang, Y. T. (2017). Low voltage and low power UWB CMOS LNA using current-reused and forward body biasing techniques. In Microwave symposium, IEEE, pp. 764–767.Google Scholar
- 14.Wu, L., Leung, H. F., & Luong, H. C. (2017). Design and analysis of CMOS LNAs with transformer feedback for wideband input matching and noise cancellation. IEEE Transactions on Circuits and Systems I: Regular Papers,PP(99), 1–10.Google Scholar