A broadband GaAs pHEMT low noise driving amplifier with current reuse and self-biasing technique
- 13 Downloads
A K/Ka-band two-stage low noise driving amplifier using a 0.15 μm GaAs pHEMT for low noise technology is designed and fabricated. In order to achieve broadband driving capability with low power consumption, current reuse technique is adopted to feed both transistors with the same DC power supply, which theoretically cuts the total current consumption in half. In addition, self-biasing technique is utilized to minimize both external power supply pads and chip footprint, which reduces the number of supply pads to a minimum of two (1 power pad and 1 ground pad). The circuit topology analysis and design procedures are also presented with an emphasis on noise figure and P1dB optimization. The low noise driving amplifier demonstrates a − 3 dB bandwidth of wider than 11 GHz, a power gain of 17 dB, an in-band mean noise figure of 2.2 dB and an in-band mean output P1dB of 6 dBm. The DC power consumption is 9.1 mA@3.3 V power supply. The chip size is 1 mm × 1.5 mm with only 1 external DC feed pad (3.3 V) and 1 ground pad (0 V). With the performance comparable to typical two-stage dual-bias low noise driving amplifier counterparts, the proposed MMIC is more attractive to chip/system users in volume-limited and power-contrained applications.
KeywordsGaAs Ka-band Low noise driving amplifier Monolithic microwave integrated circuit (MMIC) Pseudomorphic high electron mobility transistor (pHEMT)
The authors wish to thank all the collegues for chip fabrication and probe measurement.
- 2.Rocchi, M. (2016). Advanced III/V MMIC process roadmaps for Terahertz applications. In IEEE Mtt-S international microwave workshop series on advanced materials and processes for Rf and Thz applications IEEE.Google Scholar
- 5.Lv, G., Chen, W., Chen, X. (2018). An energy-efficient Ka/Q dual-band power amplifier MMIC in 0.1 μm GaAs process. IEEE Microwave Wireless Components Letters, PP(99):1–3.Google Scholar
- 10.Issakov, V., et al. (2009). ESD-protected 24 GHz LNA for radar applications in SiGe:C technology. In Silicon monolithic integrated circuits in RF systems, 2009. SiRF ‘09. IEEE topical meeting on IEEE, 2009, pp. 1–4.Google Scholar
- 11.Kanar, T, Rebeiz, G. M. (2013). A 16–24 GHz CMOS SOI LNA with 2.2 dB mean noise figure. In Compound semiconductor integrated circuit symposium IEEE, 2013, pp. 1–4.Google Scholar
- 12.Lien, C. H. et al. (2000). Ka-band monolithic GaAs PHEMT circuits for transceiver applications. In Microwave conference, 2000 Asia-Pacific IEEE, pp. 1171–1174.Google Scholar
- 15.Shin, S.-C., et al. (2005). 18–26 GHz low-noise amplifiers using 130-and 90-nm bulk CMOS technologies. In Radio frequency integrated circuits (RFIC) symposium, 2005. Digest of papers. 2005 IEEE. IEEE.Google Scholar
- 17.Tsai, J. H., Lin, J. Y., Ding, K. Y. (2012). Design of a 9–25 GHz broadband low noise amplifier using 0.15 μm GaAs HEMT process. In International conference on microwave and millimeter wave technology IEEE, pp. 1–4.Google Scholar
- 18.Armengaud, V., et al. (2009). 27–31 GHz MMIC low noise amplifier with filtering functions for space communication system. In International crimean conference on microwave and telecommunication technology IEEE, pp. 47–48.Google Scholar
- 20.Kuo, Y.-H., Tsai, J.-H., Chou, W.-H., & Huang, T.-W. (2010). A 24-GHz 3.8-dB NF low-noise amplifier with built-in linearizer. In 2010 Asia-Pacific Microwave Conference. IEEE.Google Scholar