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Journal of Solid State Electrochemistry

, Volume 23, Issue 11, pp 3031–3041 | Cite as

Improved photoelectric performance of DSSCs based on TiO2 nanorod array/Ni-doped TiO2 compact layer composites film

  • Yafeng Deng
  • Zhanhong MaEmail author
  • Fengzhang RenEmail author
  • Guangxin Wang
Original Paper
  • 49 Downloads

Abstract

In spite of the TiO2 compact layer (TCL) being widely used, it still needs more study. This paper took Ni-doped TCLs as the research target, using an innovative two-step method perfectly prepared Ni-doped TCLs with different thicknesses. And then on the basis of Ni-doped TCLs, the TiO2 nanorod array (TNA) films were successfully prepared. The effects of Ni-doped TCLs with different thicknesses on the morphology, structure, and photoelectric performance of TNA films were investigated. The results indicated that Ni-doped TCLs with appropriate thickness can significantly improve performance of TNA films and obtain satisfactory PCE stability with time. Compared with the TNA films based on Ni:TCL5, Ni:TCL10, and Ni:TCL30, the TNA film with Ni:TCL20 exhibited better comprehensive photoelectric performance, the DSSCs based on this TNA film achieved the highest Jsc (10.191 mA cm−2), Voc (0.574 V), PCE (4.42%), and the most excellent PCE stability with time.

Keywords

Ni-doped TiO2 compact layer TiO2 nanorod array film Photoelectric performance PCE stability with time 

Notes

Funding information

This work was supported by the Chinese Postdoctoral Science Fund (2343/185179), the Chinese 02 Special Fund (2017ZX02408003), the Key Research Projects of Colleges and Universities in Henan province (15A430023), and the Henan International Science and Technology Cooperation Programs (152102410035).

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  1. 1.School of Materials Science and EngineeringHenan University of Science and TechnologyLuoyangPeople’s Republic of China
  2. 2.Henan Collaborative Innovation Centre of Non-Ferrous Generic TechnologyLuoyangPeople’s Republic of China
  3. 3.Henan Key Laboratory of Non-Ferrous Materials Science and Processing TechnologyLuoyangPeople’s Republic of China

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