Exploring the effect of phosphorus doping on the utility of g-C3N4 as an electrode material in Na-ion batteries using DFT method

  • Masoumeh Molaei
  • S. Morteza Mousavi-KhoshdelEmail author
  • Mina Ghiasi
Original Paper


The suitability of P-doped g-C3N4 for sodium storage was assessed using density functional theory. The electronic structure of P-doped g-C3N4 was calculated and the results indicate that the presence of the P atom causes the band gap of g-C3N4 to narrow. Na adsorption on a P-g-C3N4 sheet was investigated. Projected density of states (PDOS) analysis revealed that pyridinic nitrogen atoms in g-C3N4 play the main role in Na adsorption. High binding energies were calculated for Na storage on g-C3N4, leading to a high voltage range (1–3 V) and a high Na diffusion barrier (2.3 eV). Doping the substrate with more P atoms resulted in lower voltages (below 2.2 V), easier Na diffusion (with a barrier of 1.2 eV), and therefore a material that was better suited than g-C3N4 for use in anodes.


g-C3N4 Na-ion battery DFT P-doped g-C3N4 Diffusion barrier 



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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Masoumeh Molaei
    • 1
  • S. Morteza Mousavi-Khoshdel
    • 1
    Email author
  • Mina Ghiasi
    • 2
  1. 1.Industrial Electrochemical Research Laboratory, Department of ChemistryIran University of Science and TechnologyTehranIran
  2. 2.Department of Chemistry, Faculty of Physics & ChemistryAlzahra UniversityTehranIran

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