FMR Investigation of the Magnetic Anisotropy in Films Synthesized by Co+ Implantation into Si
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Thin ferromagnetic films with the uniaxial magnetic anisotropy were synthesized by Co+ implantation into single-crystal silicon in the magnetic field. It was concluded that the formation of the induced magnetic anisotropy is due to the directional atomic pair ordering (Neel–Taniguchi model). The synthesized films were studied by the ferromagnetic resonance (FMR) method in the temperature range from 100 to 300 K. The FMR linewidth is almost independent of temperature, which is in agreement with the Raikher model describing the magnetic resonance of uniaxial magnetic particles. It is found that the temperature dependence of the anisotropy constant is linear. This dependence can be associated with the difference in the coefficients of thermal expansion of the Si (111) substrate and the ion-beam-synthesized cobalt silicide films.
The work was supported by the Fundamental Research Program of ONIT RAS № IV.3.3. “Element base of microelectronics, nanoelectronics and quantum computers, materials for micro- and nanoelectronics, microsystem technology”.
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