Residual stress compensated silicon nitride microcantilever array with integrated poly-Si piezoresistor for gas sensing applications

  • Manoj KandpalEmail author
  • Satya Narayan Behera
  • Jaspreet Singh
  • Vijay Palaparthy
  • Surinder Singh
Technical Paper


This work reports a novel method of microfabrication for silicon nitride based piezoresistive microcantilever device, to minimize the residual stress induced bending. The microcantilever of dimension L × W ~ 250 × 100 µm2 with stack (Si3N4/Poly-Si/Si3N4/SiO2) thickness ~ 1 µm was realized, by using standard six masks and bulk silicon micromachining fabrication process. In order to compensate the residual inbuilt stress, asymmetric structure layers for microcantilever was proposed and the presence of thin oxide layer underneath the released microcantilever stack was used to control the bending. The surface profiler measurement results showed the curvature bending in the range of ~ 4 ± 3 µm. The microcantilever was characterized further to evaluate its physical parameters such as mechanical deflection sensitivity and spring constant. The deflection sensitivity and spring constant values were ~ 0.161 ppm/nm and ~ 0.2 N/m, respectively. Finally, the practical application of fabricated piezoresistive microcantilevers was demonstrated by using it for explosive vapors sensing.



The authors acknowledge all the support and encouragement received from principle of scientific advisor (PSA) office, Government of India and Indian Institute of Technology, Bombay for providing their electrical testing setup for characterization of devices. We would like to thank Mr. Sajal Mathur for optimization of poly silicon thin films, Mr. Ramesh Banoth and Mr. M. M. Zafar for useful technical discussions. We also acknowledge Indian Institute of Science, Bangalore for Atomic force microscopy and Central scientific instruments organization (CSIO), Chandigarh for providing vapor generator facility. We wish to acknowledge all the support received from MFD, AMNSD and VPD team members and Group Head-VMFG, Shri Manoj Wadhwa for this work at SCL.

Compliance with ethical standards

Conflict of interest

The authors declare no competing financial interest.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Semi-Conductor Laboratory, Department of SpaceMohaliIndia
  2. 2.Indian Institute of TechnologyBombayIndia

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