Optical and electrical properties of ZnO/Mo/ZnO multilayer films processed at different annealing temperatures
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ZnO/Mo/ZnO transparent conductive thin films are deposited on Corning glass substrates using an RF magnetron sputtering system. The optical and electrical properties of the thin films are then examined following annealing for 40 min at temperatures ranging from 200 to 450 °C. It is shown that the resistivity of the ZnO/Mo/ZnO films has a low and reducing value at annealing temperatures up to 300 °C. However, the resistivity increases dramatically as the annealing temperature is further increased to 450 °C. The average transmittance of the annealed films generally increases with an increasing annealing temperature as the result of a larger grain size. For an annealing temperature of 450 °C, the maximum transmittance is equal to approximately 85%. Overall, the results suggest that the optimal annealing temperature for the present ZnO/Mo/ZnO films is 300 °C, which results in an electrical resistivity of 6.44 × 10−3 Ω-cm and an optical transmittance of 80%.
KeywordsZnO/Mo/ZnO multilayer film Sputtering Transmittance Electrical properties Annealing
The authors would like to express their thanks to the Ministry of Science and Technology, Taiwan, for the financial support provided to this study under Contract No. 106-2628-E-992-302-MY3.
- Chen TH, Jiang BL (2016) Optical and electronic properties of Mo:ZnO thin films deposited using RF magnetron sputtering with different process parameters. Opt Quant Electron 48(2):77–1–77–9Google Scholar
- Chen TH, Yang CL (2016) The Mg doping GZO thin film for optical and electrical application by using RF magnetron sputtering. Opt Quant Electron 48:533-1–533-9Google Scholar
- You RW, Fu YP (2017) Zinc sulfide buffer layer for CIGS solar cells prepared by chemical bath deposition. Adv Technol Innov 2(3):95–98Google Scholar