Process and characterization of photo-definable organic–inorganic dielectric for wafer level packaging
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The introduction of an organic–inorganic dielectric material into the redistribution layers in fan-out wafer level packaging technology has been investigated to improve mechanical stress, thermal stability, and electrical breakdown compared to organic dielectric materials. A photo-definable organic–inorganic dielectric material called polysilsesquioxane (PSSQ) has been studied in this work. The photo-definable PSSQ dielectric allows a simultaneous UV patterning and curing process. A PSSQ sample was prepared by spin-coating on a 6-in. Si wafer, pre-baking at 100 °C for 5 min, UV exposure, and then PGMA developing. The cured PSSQ films have a dielectric constant from 2.0 to 2.38 and dielectric loss from 0.0001 to 0.005. In addition, the 2 μm line patterns were obtained after 10 min of UV exposure. It has been demonstrated that PSSQ dielectric materials can provide excellent process capability of simultaneous UV patterning and curing process.
This research was supported by the National Research Foundation of Korea funded by the Ministry of Science and ICT (No. NRF-2018R1A2B6003921), and it was also partially supported by the Ministry of Trade, Industry & Energy and Korea Semiconductor Research Consortium support program (No. 10067804).
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