Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT
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In this paper an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is proposed. In order to mitigate different short channel effects, workfunction engineering technique is applied to the gate electrode. An analytical model for channel potential, electric field threshold voltage and drain current is developed for the device and validated with Atlas TCAD simulation results. The variation of minimum channel potential and threshold voltage with respect to different channel lengths is also performed. It is observed that device with triple material gate shows better control of short channel effects as compared to single and double material gate based devices.
This Publication is an outcome of the R&D work undertaken in the project under the Visvesvaraya PhD Scheme of Ministry of Electronics & Information Technology, Government of India, being implemented by Digital India Corporation (formerly Media Lab Asia).
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