Growth of endotaxial Ge nanocrystals in Si(100) matrix via low-energy ion implantation
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Embedded structures in a crystalline substrate, endotaxial structures, play a major role in thermoelectric and optoelectronic applications. Here, we have fabricated Ge nanostructures inside Si(100) matrix via low-energy Ge+ ion implantation. Thermally grown SiO2 layer over the Si substrate has been used as a protective coating to avoid low-energy sputtering of the Si surface. 300 keV Ge ions are implanted into Si(100) matrix at two different fluences, 1 × 1015 and 5 × 1015 ions/cm2. After annealing the as-implanted specimens at 800 °C under the inert atmosphere for 1 h, the growth of Ge nanoclusters has been studied by Raman spectroscopy. Endotaxial nature of the Ge nanocrystals has been studied using cross-sectional high-resolution TEM. The compatibility between Ge and Si at the nanocrystal/matrix interface has been discussed in detail using high-resolution phase-contrast imaging.
This work is funded by UGC-DAE-CSR-KC/CRS/15/IOP/MS/01 collaborative research project. The authors would like to thank Prof. P V Satyam, IOP, Bhubaneswar, for providing access to the electron microscopy facility.
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Conflict of interest
The authors have no conflicts of interest to declare.
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