Applied Physics A

, 125:790 | Cite as

Electronic and optical properties of Ge doped graphene and BN monolayers

  • L. Melo Oliveira
  • O. F. P. Santos
  • J. R. Martins
  • S. Azevedo
  • J. R. KaschnyEmail author


The effect of germanium doping on the properties of hexagonal boron nitride and graphene monolayers was investigated using ab initio calculations. For boron nitride, the obtained results indicate the formation of electronic states in the region of the gap, near the Fermi level. The incorporation of such impurity atoms also induces an apparent decrease in the energy gap and a significant reduction in the optical conductivity. The calculations indicate small absorbance for wavelengths from infrared to visible light. For the graphene layer, it has been obtained a null gap semi-metal material. This result can be associated with the corresponding displacement of the Fermi level. In addition, the germanium doped graphene shows similar optical properties when compared with the pristine layer.



The authors would like to thank the financial support provided by the Brazilian agencies CAPES, CNPq and INCT - Nanomateriais de Carbono.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • L. Melo Oliveira
    • 1
  • O. F. P. Santos
    • 1
    • 2
  • J. R. Martins
    • 3
  • S. Azevedo
    • 1
  • J. R. Kaschny
    • 4
    Email author
  1. 1.Departamento de FísicaUniversidade Federal da ParaíbaJoão PessoaBrazil
  2. 2.Unidade Acadêmica de Serra TalhadaUniversidade Federal Rural de PernambucoSerra TalhadaBrazil
  3. 3.Departamento de FísicaUniversidade Federal do PiauíTeresinaBrazil
  4. 4.Instituto Federal da Bahia – Campus Vitoria da ConquistaVitória da ConquistaBrazil

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