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Applied Physics A

, 125:691 | Cite as

Deep-ultraviolet SnO2 nanowire phototransistors with an ultrahigh responsivity

  • Yang Chen
  • Jia SunEmail author
  • Weijie Qiu
  • Xiaowu Wang
  • Wanrong Liu
  • Yulong Huang
  • Guozhang Dai
  • Junliang YangEmail author
  • Yongli Gao
Article
  • 36 Downloads

Abstract

The effect of interfacial charges between a semiconductor and a dielectric is absolutely crucial for high-performance phototransistors. In this paper, we report a novel deep-ultraviolet photodetector based on one-dimensional SnO2 nanowires (NWs) phototransistors with an ion-gel as the surrounding gate dielectric. The density of trapped carriers induced by light irradiation could be significantly amplified via the use of high-efficiency surrounding electrolyte coupling, thus, enhancing the photogating effect. The as-fabricated devices demonstrated an outstanding responsivity of 2 × 107 A/W under weak light illumination of 18.2 μW/cm2. Based on our systematic investigation of the threshold voltage shift and photodetection performance, we present a theoretical explanation for the high-performance SnO2 NWs phototransistors with the assistance of energy band analysis. The specific configuration and high-efficiency gating of the ion-gel electrolyte were particularly interesting from a photodetection point of view, providing new insights into the design and optimization of deep ultraviolet photodetection.

Notes

Acknowledgements

This work is supported by the National Natural Science Foundation of China (61975241, 51673214) and the National Key Research and Development Program of China (2017YFA0206600).

Supplementary material

339_2019_2997_MOESM1_ESM.docx (4.6 mb)
Supplementary material 1 (DOCX 4715 kb)

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and ElectronicsCentral South UniversityChangshaPeople’s Republic of China
  2. 2.Department of Applied Physics, School of Physics and ElectronicsCentral South UniversityChangshaHunanChina
  3. 3.Department of Physics and AstronomyUniversity of RochesterRochesterUSA

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