Deep-ultraviolet SnO2 nanowire phototransistors with an ultrahigh responsivity
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The effect of interfacial charges between a semiconductor and a dielectric is absolutely crucial for high-performance phototransistors. In this paper, we report a novel deep-ultraviolet photodetector based on one-dimensional SnO2 nanowires (NWs) phototransistors with an ion-gel as the surrounding gate dielectric. The density of trapped carriers induced by light irradiation could be significantly amplified via the use of high-efficiency surrounding electrolyte coupling, thus, enhancing the photogating effect. The as-fabricated devices demonstrated an outstanding responsivity of 2 × 107 A/W under weak light illumination of 18.2 μW/cm2. Based on our systematic investigation of the threshold voltage shift and photodetection performance, we present a theoretical explanation for the high-performance SnO2 NWs phototransistors with the assistance of energy band analysis. The specific configuration and high-efficiency gating of the ion-gel electrolyte were particularly interesting from a photodetection point of view, providing new insights into the design and optimization of deep ultraviolet photodetection.
This work is supported by the National Natural Science Foundation of China (61975241, 51673214) and the National Key Research and Development Program of China (2017YFA0206600).
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