Uniform and electroforming-free resistive memory devices based on solution-processed triple-layered NiO/Al2O3 thin films
- 59 Downloads
In this work, a resistive switching memory device with Ag/(NiO/Al2O3)3/fluorine-doped SnO2 structure was fabricated with solution-based process including spin-coating of triple-layered NiO/Al2O3 films and ink-jet printing of Ag electrodes. Bipolar resistive switching characteristic was observed in such a structure, with the resistance ratio between high and low resistance states over two orders and good cycling stability in voltage sweeping measurements. More importantly, the SET/RESET voltages, which were in the range of 0.8‒2.4 V and − 0.7 to − 2.8 V, respectively, showed significant improvement in voltage distribution (78.4% and 71.2% narrower) as compared to devices solely based on Al2O3 film. It is believed that the narrow distribution of SET and RESET voltages results from the reduced randomness of the formation and rupture of conductive filaments under applied voltages, since NiO and Al2O3 have different dielectric constants and the distribution of electric field in the multilayers can be varied to facilitate the formation and rupture of conductive filaments. Moreover, electroforming process was not required to activate the device based on triple-layered NiO/Al2O3 films. The characterization results especially the narrow SET/RESET voltage distribution and forming-free property make devices based on multilayered NiO/Al2O3 thin films promising for thin film-based nonvolatile memory applications.
This work has been supported by the National Natural Science Foundation of China (NSFC) under project No. 61404031, the Science and Technology Program of Guangdong Province of China under Project No. 2016A050502058, and the Department of Education of Guangdong Province under Project No. 2014KTSCX054.
- 12.Z.H. Chen, Z. Liu, W.K. Ma, Y.K. Shen, H.Y. Zhang, T.P. Chen, International Nanoelectronics Conference 1–2 (2016)Google Scholar