Room temperature multiferroicity for BaFe12O19 thin film fabricated by pulsed laser deposition technique
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BaFe12O19 thin film has been deposited on silicon (111) substrate by the pulsed laser deposition (PLD) technique. The remnant polarization is found ~ 0.016 μC/cm2 at room temperature measured by the PE-loop tracer. Ferromagnetic properties of the prepared film have been determined by the superconducting quantum interference device (SQUID) vibrating sample magnetometer which shows the saturation magnetization 216 and 88 emu/cm3 at 300 and 5 K temperature, respectively. Zero fields cool and field cool magnetic measurements have been studied in the temperature range 5–350 K under 100 Oe magnetic field. The BaFe12O19 film has semiconducting behaviour above the 300 kHz frequency with conductivity σ ~ 10–6 Ω−1 cm−1. Further, I–V measurement of the BaFe12O19 film deposit on silicon substrate was carried out within the sweeping voltage ± 10 V, which reveals the diode-like rectifying behaviour. The co-existence of ferromagnetic and ferroelectric properties in a BaFe12O19 film can be used in future generation memory devices.
This work has been financially supported by Council of Scientific & Industrial Research (C.S.I.R.), New Delhi through Grant no: 03(1370)/16/EMR-II. The authors are thankful to Dr. R.J. Choudhary from UGC-DAE-CSR, to provide the PLD and magnetic measurement facility. The authors are also thankful to Dr. M. Gupta from UGC-DAE-CSR, Indore for XRD measurements.