Applied Physics A

, 125:278 | Cite as

Scattering analysis of ultrathin barrier (< 7 nm) GaN-based heterostructures

  • Polat NarinEmail author
  • Engin Arslan
  • Mehmet Ozturk
  • Mustafa Ozturk
  • Sefer Bora Lisesivdin
  • Ekmel Ozbay


In this study, two-dimensional electron gas (2DEG) mobility analysis of AlN/GaN and InAlN/GaN structures with ultrathin barrier layers by metal organic chemical vapor deposition (MOCVD) has been performed with Hall effect measurements which is carried out under temperature from 15 to 350 K and a single magnetic field of 0.5 T. As a result of the scattering analysis made with Matthiessen’s rule, it is shown that while the interface roughness scattering mechanism is dominated on the 2DEG mobility at low temperatures, the 2DEG mobility has been dominated by the polar optical phonon-scattering mechanism at high temperatures. Also, the acoustic phonon-scattering mechanism is effective on the 2DEG mobility at middle temperature. Furthermore, the interface and the quantum well parameters such as deformation potential, quantum well width, and correlation length of the interface are determined for each. As well as experimental measurements, the conduction band energy diagrams of the studied samples have been calculated using one-dimensional (1D) self-consistent Schrödinger–Poisson equations. A 2D quasitriangular quantum well formation has been shown for each studied samples. 2DEG probability density of samples has been investigated.



One of the authors (E.O.) also acknowledges partial support from the Turkish Academy of Sciences. This research was supported in part by the Distinguished Young Scientist Award of Turkish Academy of Sciences (TUBA-GEBIP 2016).


  1. 1.
    C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, C. Gaquire, J.C. DeJaeger, K. Cico, K. Fröhlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik, Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation. IEEE Electron. Device Lett. 30, 1030–1032 (2009)ADSCrossRefGoogle Scholar
  2. 2.
    F. Medjdoub, M. Zegaoui, N. Rolland, P.A. Rolland, Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate. Appl. Phys. Lett. 98(22), 223502 (2011)ADSCrossRefGoogle Scholar
  3. 3.
    Y. Cao, D. Jena, High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions. Appl. Phys. Lett. 90(18), 182112 (2007)ADSCrossRefGoogle Scholar
  4. 4.
    L. Shen, S. Heikman, B. Moran, R. Coffie, N.Q. Zhang, D. Buttari, I.P. Smorchkova, S. Keller, S.P. DenBaars, U.K. Mishra, AlGaN/AlN/GaN high-power microwave HEMT. IEEE Electron. Device Lett. 22, 457–459 (2001)ADSCrossRefGoogle Scholar
  5. 5.
    O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, J. Hilsenbeck, Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85, 3222–3233 (1999)ADSCrossRefGoogle Scholar
  6. 6.
    D.F. Storm, D.A. Deen, D.S. Katzer, D.J. Meyer, S.C. Binari, T. Gougousi, T. Paskova, E.A. Preble, K.R. Evans, D.J. Smith, Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates. J. Cryst. Growth 380, 14–17 (2013)ADSCrossRefGoogle Scholar
  7. 7.
    A. Teke, S. Gökden, R. Tülek, J.H. Leach, Q. Fan, J. Xie, Ü. Özgür, H. Morkoç, S.B. Lisesivdin, E. Özbay, The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures. New J. Phys. 11, 063031 (2009)ADSCrossRefGoogle Scholar
  8. 8.
    M.N. Gurusinghe, S.K. Davidsson, T.G. Andersson, Two-dimensional electron mobility limitation mechanisms in AlxGa1 − xN∕GaN heterostructures. Phys. Rev. B 72, 045316 (2005)ADSCrossRefGoogle Scholar
  9. 9.
    E. Arslan, S. Bütün, S.B. Lisesivdin, M. Kasap, S. Ozcelik, E. Ozbay, The persistent photoconductivity effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates. J. Appl. Phys. 103, 103701 (2008)ADSCrossRefGoogle Scholar
  10. 10.
    P. Tasli, B. Sarikavak, G. Atmaca, K. Elibol, A.F. Kuloglu, S.B. Lisesivdin, Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: effect of indium-mole fraction, doping and layer thicknesses. Phys. B 405, 4020–4026 (2010)ADSCrossRefGoogle Scholar
  11. 11.
    M. Gonschorek, J.F. Carlin, E. Feltin, M.A. Py, N. Grandjean, High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures. Appl. Phys. Lett. 89, 062106 (2006)ADSCrossRefGoogle Scholar
  12. 12.
    H.G. Xing, D. Deen, Y. Cao, T. Zimmermann, P. Fay, D. Jena, MBE-grown ultra-shallow AlN/GaN HFET technology. ECS Trans. 11, 233–237 (2007)CrossRefGoogle Scholar
  13. 13.
    G. Martin, A. Botchkarev, A. Rockett, H. Morkoc, Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by X-ray photoemission spectroscopy. Appl. Phys. Lett. 68, 2541–2543 (1996)ADSCrossRefGoogle Scholar
  14. 14.
    A. Bourret, C. Adelmann, B. Daudin, J.L. Rouvière, G. Feuillet, G. Mula, Strain relaxation in (0001) AlN/GaN heterostructures. Phys. Rev. B 63, 245307 (2001)ADSCrossRefGoogle Scholar
  15. 15.
    A.M. Sanchez, F.J. Pacheco, S.I. Molina, J. Stemmer, J. Aderhold, J. Graul, Critical thickness of high-temperature AIN interlayers in GaN on sapphire (0001). J. Electron. Mater. 30, L17–L20 (2001)ADSCrossRefGoogle Scholar
  16. 16.
    K. Jeganathan, T. Ide, M. Shimizu, H. Okumura, Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy. J. Appl. Phys. 93, 2047–2050 (2003)ADSCrossRefGoogle Scholar
  17. 17.
    T. Koyama, M. Sugawara, Y. Uchinuma, J.F. Kaeding, R. Sharma, T. Onuma, S. Nakamura, S.F. Chichibu, Strain relaxation in NH3 source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates. Phys. Status Solidi (a) 203, 1603–1606 (2006)ADSCrossRefGoogle Scholar
  18. 18.
    Y. Cao, K. Wang, A. Orlov, H. Xing, D. Jena, Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕ GaN heterojunctions. Appl. Phys. Lett. 92, 152112 (2008)ADSCrossRefGoogle Scholar
  19. 19.
    I.P. Smorchkova, S. Keller, S. Heikman, C.R. Elsass, B. Heying, P. Fini, J.S. Speck, U.K. Mishra, Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers. Appl. Phys. Lett. 77, 3998–4000 (2000)ADSCrossRefGoogle Scholar
  20. 20.
    G. Atmaca, S. Ardali, E. Tiras, T. Malin, V.G. Mansurov, K.S. Zhuravlev, S.B. Lisesivdin, Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer. Solid State Electron. 118, 12–17 (2016)ADSCrossRefGoogle Scholar
  21. 21.
    M. Auf der Maur, M. Povolotskyi, F. Sacconi, A. Pecchia, G. Romano, G. Penazzi, A. Di Carlo, Opt. Quantum Electron. 40(14), 1077–1083 (2008)CrossRefGoogle Scholar
  22. 22.
    G. Atmaca, P. Narin, B. Sarikavak-Lisesivdin, S.B. Lisesivdin, Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer. Phys. E 79, 67–71 (2016)CrossRefGoogle Scholar
  23. 23.
    U. Penner, H. Rücker, I.N. Yassievich, Theory of interface roughness scattering in quantum wells. Semicond. Sci. Technol. 13, 709–713 (1998)ADSCrossRefGoogle Scholar
  24. 24.
    Y. Zhang, I.P. Smorchkova, C.R. Elsass, S. Keller, J.P. Ibbetson, S. Denbaars, U.K. Mishra, J. Singh, Charge control and mobility in AlGaN/GaN transistors: experimental and theoretical studies. J. Appl. Phys. 87, 7981–7987 (2000)ADSCrossRefGoogle Scholar
  25. 25.
    G.Y. Zhang, Y.Z. Tong, Z.J. Yang, S.X. Jin, J. Li, Z.Z. Gan, Relationship of background carrier concentration and defects in GaN grown by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 71, 3376–3378 (1997)ADSCrossRefGoogle Scholar
  26. 26.
    D. Zanato, S. Gokden, N. Balkan, B.K. Ridley, W.J. Schaff, The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN. Semicond. Sci. Technol. 19, 427–432 (2004)ADSCrossRefGoogle Scholar
  27. 27.
    S. Gökden, Mobility of two-dimensional electrons in an AlGaN/GaN modulation-doped heterostructure. Phys. Status Solidi (a) 200, 369–377 (2003)ADSCrossRefGoogle Scholar
  28. 28.
    S.B. Lisesivdin, S. Acar, M. Kasap, S. Ozcelik, S. Gokden, E. Ozbay, Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN Heterostructures. Semicond. Sci. Technol. 22, 543–548 (2007)ADSCrossRefGoogle Scholar
  29. 29.
    J.M. Li, J.J. Wu, X.X. Han, Y.W. Lu, X.L. Liu, Q.S. Zhu, Z.G. Wang, A model for scattering due to interface roughness in finite quantum wells. Semicond. Sci. Technol. 20, 1207–1212 (2005)ADSCrossRefGoogle Scholar
  30. 30.
    S. Gökden, A. Ilgaz, N. Balkan, S. Mazzucato, The effect of scattering mechanisms on the low field mobility in GaN/AlGaN heterostructures. Phys. E 25, 86–92 (2004)CrossRefGoogle Scholar
  31. 31.
    R. Gaska, J.W. Yang, A. Osinsky, Q. Chen, M.A. Khan, A.O. Orlov, G.L. Snider, M.S. Shur, Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates Appl. Phys. Lett. 72, 707–709 (1998)Google Scholar
  32. 32.
    D. Huang, F. Yun, M.A. Reshchikov, D. Wang, H. Morkoc, D.L. Rode, L.A. Farina, Ç. Kurdak, K.T. Tsen, S.S. Park, K.Y. Lee, Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy. Solid State Electron. 45(5), 711–715 (2001)ADSCrossRefGoogle Scholar
  33. 33.
    D. Huang, F. Yun, M.A. Reshchikov, D. Wang, H. Morkoc, D.L. Rode, L.A. Farina, Ç. Kurdak, K.T. Tsen, S.S. Park, K.Y. Lee, Low interface state density AlN/GaN MISFETs. Electron. Lett. 35, 2145–2146 (1999)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Polat Narin
    • 1
    Email author
  • Engin Arslan
    • 2
    • 5
  • Mehmet Ozturk
    • 1
  • Mustafa Ozturk
    • 2
  • Sefer Bora Lisesivdin
    • 1
  • Ekmel Ozbay
    • 2
    • 3
    • 4
  1. 1.Department of Physics, Faculty of ScienceGazi UniversityAnkaraTurkey
  2. 2.Nanotechnology Research CenterBilkent UniversityAnkaraTurkey
  3. 3.Department of PhysicsBilkent UniversityAnkaraTurkey
  4. 4.Department of Electrical and Electronics EngineeringBilkent UniversityAnkaraTurkey
  5. 5.Department of Electrical and Electronics EngineeringAntalya Bilim UniversityAntalyaTurkey

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