Capacitively coupled plasma-stimulated room-temperature Mg and Mn doping and electrical activation in GaAs
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In this paper, capacitively coupled plasma stimulated room-temperature Mg and Mn doping with self-bias around 1 kV and its rapid thermal annealing (RTA) electrical activation in semi-insulator GaAs samples are reported. Doping depths of Mg and Mn in the GaAs samples detected by secondary ion mass spectroscopy (SIMS) are tens of nm or so. After RTA at 740 °C and 900 °C for dozens of seconds, most Mn and Mg accepters are electrically activated. In both cases, densities of impurity atoms at the surfaces of the p-GaAs samples are around 10E20/cm3. The physical mechanism of this technique for doping shallow acceptors and RTA electrical activation are discussed.
This work is supported by the National Natural Science Foundation of China under grant numbers 11674004.
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