Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition
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InGaN interlayer was grown between GaN layers on sapphire substrate using metal organic chemical vapour deposition. The crystalline quality of the sample was investigated using high-resolution X-ray diffraction. The indium composition and InGaN thickness were determined to be 10–15% and 5–10 nm, respectively. Transmission electron microscopy image revealed the interfacial characteristics of the InGaN and GaN layers. Raman spectroscopy revealed prominent GaN peak positions with InGaN shoulder peaks. The growth mode of InGaN and GaN was determined as nanoislands with helical-like morphology by atomic force microscopy. Hall measurement showcased improvement in the mobility and bulk concentration for the GaN/InGaN (5 nm)/GaN structures.
The authors gratefully acknowledge the Department of Science and Technology (DST), Government of India (DST/TM/SERI/2K12/71(G)), for funding the research project under SERI. The authors also thank Dr. D.V. Sridhara Rao, Defence Metallurgical Research Laboratory (DMRL), Hyderabad, India, for his constant support in TEM analysis. The author (K. Prabakaran) would like to thank Dr. David Mackenzie, Department of Electronics and Nanoengineering, Aalto University, Finland, for his diligent proofreading of this manuscript.