Effect of oxygen pressure on the structural and optical properties of BaSnO3 films prepared by pulsed laser deposition method
- 16 Downloads
BaSnO3 thin films were deposited on quartz substrate by pulsed laser deposition technique under different background oxygen pressures and the effects of oxygen pressure on the structural, morphological and optical properties of BaSnO3 thin films are systematically investigated using different characterization techniques. The BaSnO3 films deposited without and with oxygen pressures are polycrystalline in nature with cubic crystalline phase. Moderate oxygen ambience favors enhanced crystallinity of the BaSnO3 films and 0.02 mbar is found to be optimum oxygen pressure for highest crystallinity. The surface morphology of the deposited films was strongly affected by the oxygen pressure in the deposition chamber. A systematic increase of film thickness and decrease of RMS surface roughness is observed with increase in oxygen pressure. XPS analysis reveals that barium is in the + 2 oxidation state and Sn is in the + 4 oxidation state in the film deposited at optimum oxygen pressure of 0.02 mbar. The deposited BaSnO3 films have photoluminescence emissions in the visible region and have high transmittance in the visible and infrared regions. The BaSnO3 films deposited at oxygen ambience shows a blue shift in the optical band gap. The optimized film shows high crystallinity, high value of transmittance and wide band gap energy which indicates its suitability for optoelectronic devices.
The authors acknowledge the SICC, University of Kerala for providing the facilities for the characterization of our samples.
- 5.C. Doroftei, P.D. Popa, F. Iacomi, J. Optoelectr, Adv. Mater. 14(3–4), 413–417 (2012)Google Scholar
- 18.M. Wu, S. Yu, L. He, L.Yang,W. Zhang, Sci. Rep. 7: 103. https://doi.org/10.1038/s41598-017-00178-9
- 37.B.D. Cullity, S.R. Stock, Elements of X-ray Diffraction in Diffraction III: Real Samples, 3rd edn. (Addison-Wesley, Boston, Chap. 5,1978),p. 170Google Scholar
- 52.Y. Yao, S.G. Lu, H. Chena, J. Appl. Phys. 96, 11 (2004)Google Scholar
- 58.J.I. Pankove, Optical Processes in Semiconductors (Dover Publications, New York, 1971)Google Scholar