Applied Physics A

, 125:94 | Cite as

Characterization and nanocrystalline growth of a-Ge:In/c-GaAs

  • Hussein Kh. RasheedEmail author


Nanocrystalline a-Ge:In films with a thickness of 500 nm and deposition rate 1 nm/s were deposited on glass and c-GaAs substrates using thermal evaporation method. The influence of thermal annealing on the structure and morphology of the a-Ge:In films has been investigated using XRD, SEM, and AFM techniques. The crystallinity of the films was improved by heating. The fcc nanocrystalline strcture with preferred orientation along the \(\left\langle {111} \right\rangle\) direction was created when a-Ge:In films were heated at different temperatures. The rectification properties were observed in all the a-Ge:In/c-GaAs junctions; barrier height and the open circuit voltage increased with an increase of heating temperature. Analysis of obtained results indicated that the p–n junctions formed by depletion layer are highly compensated and the current transport is dominated by the space charge.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Department of Physics, College of ScienceUniversity of BaghdadBaghdadIraq

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