Applied Physics A

, 125:60 | Cite as

Spin-dependent giant junction magnetoresistance in simple Fe/p-Si(001) Schottky heretrojunction at low temperature

  • Anirban SarkarEmail author
  • Rajdeep Adhikari
  • Amal Kumar Das


We report on the giant junction magnetoresistance observed at low temperature in Fe/p-Si Schottky heterojunction. The device shows good rectifying characteristics at room temperature and a dual—Schottky as well as magnetic diode—characteristics at low temperature, below 50 K. Formation of a magnetic field-dependent potential barrier due to electrical injection of spin-polarized carriers from the ferromagnetic electrode into the semiconductor is speculated to result in such large junction resistance. The magnetoresistance value is of the order of \(10^{4}\%\) at 10 K and saturates at \(\sim 0.5\,\hbox {kOe}\), showing dual functionality—working as a magnetic diode as well as a magnetoresistive element.



We acknowledge the financial support of the Department of Science and Technology (DST), India (Project No. EMR/2014/001026) for this work. The authors, Anirban Sarkar and Rajdeep Adhikari, would like to further acknowledge the financial support of the Council of Scientific and Industrial Research (CSIR), India. We would also like to thank Patrick Schö ffmann from Forschungszentrum Jülich GmbH for reading and correcting the manuscript.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Department of PhysicsIndian Institute of TechnologyKharagpurIndia
  2. 2.Forschungszentrum Jülich GmbHQuantum Materials and Collective Phenomena (JCNS-2/PGI-4)JülichGermany
  3. 3.Institut für Halbleiter- und FestkörperphysikJohannes Kepler UniversitätLinzAustria

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