Temperature vs. impedance dependencies of neutron-irradiated nanocrystalline silicon carbide (3C-SiC)
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At the present work, impedance spectroscopy of nanocrystalline silicon carbide (3C-SiC) has been investigated as a function of temperature. Nanocrystalline 3C-SiC particles irradiated by neutrons (2 × 1013 n cm− 2s− 1) up to 20 h. Impedance of neutron-irradiated nanocrystalline 3C-SiC has been studied at the temperature range of 100–400 K. Impedance spectra of the nanocrystal have been comparatively studied before and after neutron irradiation. The natures of conductivity and the metal—semiconductor transition temperature (TMS = 250 K, 325 K, and 370 K at the various frequencies) have been defined from the complex impedance spectroscopy. Polarization of nanocrystalline 3C-SiC increased corresponding to neutron irradiation duration. The mechanism of all effects observed in the experiments has been given in the work.
This work was supported by the Science Development Foundation under the President of the Republic of Azerbaijan—Grant No. EİF/GAM-4-BGM-GİN-2017-3(29)-19/01/1. I gratefully acknowledge the assistance of my colleagues from the Institute of Radiation Problems of the Azerbaijan National Academy of Sciences, the National Nuclear Research Center (NNRC) and “Reactor Infrastructure Centre (RIC)” and “Condensed Matter Physics Department” at IJS. I would like to thank Prof. Dr. Borut Smodis for providing irradiated samples in TRIGA Mark II type research reactor and Prof. Dr. Vid Bobnar and Aleksander Matavž for encouraging discussions.
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