Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices
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In this work, hydrogenated gallium-doped zinc oxide (HGZO) thin films were deposited on polyethylene terephthalate substrates at room temperature by RF magnetron sputtering. The effects of RF power and Ar + H2 flow rate on electrical and optical properties of HGZO thin films were investigated systematically. All of HGZO thin films exhibited a high average transmittance of about 77.3–82.9% in the visible range, and the minimum resistivity value reached 7.1 × 10− 4 Ω·cm. Potential application of polymer-dispersed liquid crystal device based on HGZO thin film was also successfully demonstrated.
This work was supported by National Natural Science Foundation of China (61774160).
- 20.J.K. Kim, J.M. Lee, J.W. Lim, J.H. Kim, S.J. Yun, Jan. J. Appl. Phys. 49, 04DP09 (2010)Google Scholar