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Applied Physics A

, 124:817 | Cite as

Enhanced NO2 gas-sensing performance of Pd/ZnO-codecorated SnO2 nanorod sensors

  • Seung-Bok Choi
  • Woo Seok Lee
  • Chongmu LeeEmail author
  • Sangmin Lee
Article
  • 89 Downloads

Abstract

SnO2 nanorods codecorated with Pd and ZnO were synthesized using a three-step process involving: the synthesis of SnO2 nanorods by the thermal evaporation of Sn powders followed by the sol–gel deposition of ZnO and Pd nanoparticles. The NO2 gas-sensing properties of the nanorods were examined. The nanorods were composed of primitive tetragonal-structured single crystal SnO2, while the ZnO and Pd nanoparticles were composed of wurtzite-structured ZnO single crystal and face-centered cubic-structured Pd single crystal, respectively. The Pd/ZnO-codecorated SnO2 nanorod sensors showed a remarkably enhanced response to NO2 compared to either ZnO or Pd-decorated SnO2 nanorod sensors. The responses of multiple networked Pd/ZnO-decorated SnO2 nanorod sensors were increased four to fivefold at NO2 concentrations ranging from 1 to 5 ppm Pd/ZnO-decorated SnO2 nanorod sensors which also showed shorter response and recovery times and higher selectivity than with ZnO or Pd-decorated SnO2 nanorod sensors. The NO2 sensing mechanism of the Pd/ZnO-codecorated SnO2 nanorods is also discussed.

Notes

Acknowledgements

This study was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (nos. 2015R1D1A1A01057029 and 2010–0020163).

References

  1. 1.
    M. Penza, C. Martucci, G. Gassano, Sens. Actuators B 50, 52–59 (1998)CrossRefGoogle Scholar
  2. 2.
    K. Wetchakun, T. Samerjai, N. Tamaekong, C. Liewhiran, C. Siriwong, V. Kruefu, A. Wisitsorat, A. Tuantranont, S. Phanichphant, Sens. Actuators B 160, 580–591 (2011)CrossRefGoogle Scholar
  3. 3.
    N.D. Hoa, S.A. El-Safry, Chem. Eur. J. 17, 12896–12901 (2011)CrossRefGoogle Scholar
  4. 4.
    T.J. Hsueh, S.J. Chang, C.L. Hsu, Y.R. Lin, I.C. Chen, Appl. Phys. Lett. 91, 053111–053111 (2007)ADSCrossRefGoogle Scholar
  5. 5.
    M.S. Wagh, G.H. Jain, D.R. Patil, S.A. Patil, L.A. Patil, Sens. Actuators B 115, 128–133 (2006)CrossRefGoogle Scholar
  6. 6.
    J. Wollenstein, J.A. Plaza, C. Cane, Y. Min, H. Bottner, H.L. Tuller, Sens. Actuators B 93, 350–355 (2003)CrossRefGoogle Scholar
  7. 7.
    S. Mridha, D. Basak, Semicond. Sci. Technol. 21, 928–932 (2006)ADSCrossRefGoogle Scholar
  8. 8.
    Y. Sun, N.G. Ndifor-Angwafor, J.D. Riley, M.N.R. Ashfold, Chem. Phys. Lett. 431, 352–357 (2006)ADSCrossRefGoogle Scholar
  9. 9.
    Y. Kolmakov, G. Zhang, M. Cheng, Moskovits, Adv. Mater. 15, 997–1000 (2003)CrossRefGoogle Scholar
  10. 10.
    Y. Liu, E. Koep, M. Liu, Chem. Mater. 17, 3997–4000 (2005)CrossRefGoogle Scholar
  11. 11.
    F. Chaabouni, M. Abaab, B. Rezig, Sens. Actuators B. 100, 200–204 (2004)CrossRefGoogle Scholar
  12. 12.
    Q. Wan, T. Wang, Chem. Commun. 1, 3841–3843 (2005)CrossRefGoogle Scholar
  13. 13.
    H. Kim, C. Jin, S. Park, S. Kim, C. Lee, Sens. Actuators B 161, 594–599 (2012)CrossRefGoogle Scholar
  14. 14.
    A. Kolmakov, D.O. Klenov, Y. Lilach, S. Stemmer, M. Moskovits, Nano Lett. 5, 667–673 (2005)ADSCrossRefGoogle Scholar
  15. 15.
    T. Rakshit, S.P. Mondal, I. Manna, S.K. Ray, ACS Appl. Mater. Interfaces 4, 6085–6095 (2012)CrossRefGoogle Scholar
  16. 16.
    C.W. Na, H.-S. Woo, I.-D. Kim, J.-H. Lee, Chem. Commun. 47, 5148–5150 (2011)CrossRefGoogle Scholar
  17. 17.
    G.J. Sun, J.K. Lee, S.B. Choi, W.I. Lee, H.W. Kim, C. Lee, ACS Appl, Mater. Interfaces 9, 9975–9981 (2017)CrossRefGoogle Scholar
  18. 18.
    S. Park, S. An, Y. Mun, C. Lee, ACS Appl. Mater. Interfaces 5, 4285–4292 (2013)CrossRefGoogle Scholar
  19. 19.
    N. Singh, A. Ponzoni, R.K. Gupta, P.S. Lee, E. Comini, Sens. Actuators B 160, 1346–1351 (2011)CrossRefGoogle Scholar
  20. 20.
    S.-W. Choi, A. Katoch, J.-H. Kim, S.S. Kim, J. Mater. Chem. C. 3, 1521–1527 (2015)CrossRefGoogle Scholar
  21. 21.
    B.S. Min, Y.H. Park, C.S. Lee, J. Nanosci Nanotechnol. 14, 8495–8501 (2014)CrossRefGoogle Scholar
  22. 22.
    A. Srivastava, K. Jain, Mater. Chem. Phys. 105, 385–390 (2007)CrossRefGoogle Scholar
  23. 23.
    J.H. Kim, H.W. Kim, S.S. Kim, Sens. Actuators B 239, 578–585 (2017)CrossRefGoogle Scholar
  24. 24.
    M. Bonyani, J.K. Lee, G.J. Sun, S. Lee, S.T. Ko, C. Lee, Thin Solid Films 636, 257–266 (2017)ADSCrossRefGoogle Scholar
  25. 25.
    K. Lee, W.S. Lee, S.K. Hyun, C. Lee, Phys. Status Solidi A 215, 1700929 (2018)ADSCrossRefGoogle Scholar
  26. 26.
    S. Rudeerat, Bull. Mater. Sci. 38, 1033–1038 (2015)CrossRefGoogle Scholar
  27. 27.
    K. Nejati, Z. Rezvani, R. Pakizevand, Int. Nano Lett. 1, 75–81 (2011)Google Scholar
  28. 28.
    S. Park, S. An, H. Ko, S. Lee, C. Lee, Sens. Actuators B 188, 1270–1276 (2013)CrossRefGoogle Scholar
  29. 29.
    N. Barsan, U. Weimar, J. Electroceram. 7, 143–167 (2001)CrossRefGoogle Scholar
  30. 30.
    T.V. Belysheva, L.P. Bogovtseva, E.A. Kazachkov, N.V. Serebryakova, J. Anal. Chem. 58, 583–587 (2003)CrossRefGoogle Scholar
  31. 31.
    R. Ferro, J.A. Rodriguez, P. Bertrand, Thin Solid Films 516, 2225–2230 (2008)ADSCrossRefGoogle Scholar
  32. 32.
    N.H. Kim, H.W. Kim, C. Seoul, C. Lee, Mater. Sci. Eng. B 111, 131–134 (2004)CrossRefGoogle Scholar
  33. 33.
    M. Boudart, J. Mol. Catal. A: Chem. 138, 319–321 (1999)CrossRefGoogle Scholar
  34. 34.
    D.O. Kolmakov, Y. Klenov, S. Lilach, M. Stemmer, Moskovits, Nano Lett. 5, 667–673 (2005)ADSCrossRefGoogle Scholar
  35. 35.
    A.J. Du, S.C. Smith, X.D. Yao, G.Q. Lu, J. Am. Chem. Soc. 129, 10201–10204 (2007)CrossRefGoogle Scholar
  36. 36.
    G. Jimenez-Cadena, J. Riu, F.X. Rius, Analyst 132, 1083–1099 (2007)ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • Seung-Bok Choi
    • 1
  • Woo Seok Lee
    • 2
  • Chongmu Lee
    • 2
  • Sangmin Lee
    • 3
  1. 1.Department of Mechanical EngineeringInha UniversityIncheonRepublic of Korea
  2. 2.Department of Materials Science and EngineeringInha UniversityIncheonRepublic of Korea
  3. 3.Department of Electronic EngineeringInha UniversityIncheonRepublic of Korea

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