Applied Physics A

, 125:64 | Cite as

Crystallization-dependent structural and optical properties of Mn1.56Co0.96Ni0.48O4 thin films grown by chemical solution deposition on Si (100)

  • W. Zhou
  • C. Y. Wu
  • Y. M. Yin
  • W. L. Ma
  • Z. M. HuangEmail author


Mn1.56Co0.96Ni0.48O4 (MCN) thin films are deposited onto Si (100) substrate under different post-annealing temperatures of 450 °C and 600 °C. As identified by the X-ray diffraction (XRD) and SEM, pronounced difference in crystallinity is observed between the film annealed under 600 °C and 450 °C. Spectroscopic ellipsometry spectra, infrared transmission and reflection spectra are measured to compare and analyze the optical properties of the crystalline and non-crystalline MCN thin films. Ellipsometry measurement demonstrates the n, k spectra in the visible-to-near infrared range (300–1000 nm), indicating three absorption peaks locating at 1.6 eV, 2.6 eV, and above 3.5 eV for the crystallized sample, which corresponds to the charge-transfer (CT) transition involving O2− (2p) and Mn4+ (3d) ions, O2− (2p) to Co2+ (3d) ions, and O2− (2p) and Mn3+ (3d) ions, respectively. Transmittance and reflectance spectra in the near infrared (1.3 µm)-to-far infrared (25 µm) range are also investigated. A two-oscillator model is performed to directly analyze the combined transmission and reflection spectra in the far infrared (400 cm−1–800 cm−1) to acquire the optical constants, where the difference of n, k values of the crystallized and non-crystalline MCN films in reststrahlen band is investigated for the first time.



This work was supported by Innovation Shanghai Institute of Technical Physics, CX-197; National Science Fund (NSF) for Youth of China, Grant No. 61604160; NSF for Distinguished Youth Scholars, Grant No. 61625505.


  1. 1.
    X.B. Zhang, W. Ren, W.W. Kong, Q. Zhou, L. Wang, L. Bian et al., Appl Surf Sci 435, 815 (2018)CrossRefADSGoogle Scholar
  2. 2.
    F. Zhang, Z.M. Huang, Appl. Phys. Lett. 111, 222103 (2017)CrossRefADSGoogle Scholar
  3. 3.
    C. OuYang, W. Zhou, J. Wu, Y. Hou, Y.Q. Gao, Z.M. Huang, Appl. Phys. Lett. 105, 022105 (2014)CrossRefADSGoogle Scholar
  4. 4.
    L. He, Z.Y. Ling, Appl. Phys. Lett. 98, 242112 (2011)CrossRefADSGoogle Scholar
  5. 5.
    R. Dannenberg, S. Baliga, R.J. Gambino, A.H. King, A.P. Doctor, J. Appl. Phys. 86, 514 (1999)CrossRefADSGoogle Scholar
  6. 6.
    G. Ji, A.M. Chang, J.B. Xu, H.M. Zhang, J. Hou, B. Zhang et al., Mater Lett 107, 103 (2013)CrossRefGoogle Scholar
  7. 7.
    W. Zhou, L.B. Zhang, C. Ouyang, J. Wu, Z.M. Huang, X.F. Xu, Appl Surf Sci 311, 443 (2014)CrossRefADSGoogle Scholar
  8. 8.
    Y. Hou, Z.M. Huang, Y.Q. Gao, Y.J. Ge, J. Wu, J.H. Chu, Appl. Phys. Lett. 92, 202115 (2008)CrossRefADSGoogle Scholar
  9. 9.
    W.Q. Di, F. Liu, T. Lin, H.F. Kong, C.M. Meng, W.B. Zhang et al., Appl Surf Sci 447, 287 (2018)CrossRefADSGoogle Scholar
  10. 10.
    Y.J. Ge, Z.M. Huang, Y. Hou, J.H. Qin, T.X. Li, J.H. Chu, Thin Solid Films 516, 5931 (2008)CrossRefADSGoogle Scholar
  11. 11.
    Q. Shi, W. Ren, W.W. Kong, L. Wang, C. Ma, J.B. Xu et al., J Mater Sci Mater El 28, 13659 (2017)CrossRefGoogle Scholar
  12. 12.
    W. Zhou, J. Appl. Phys. 115, 093512 (2014)CrossRefADSGoogle Scholar
  13. 13.
    Y.Q. Gao, Appl. Phys. A Mater. Sci. Process 114, 829 (2013)CrossRefADSGoogle Scholar
  14. 14.
    Y.Q. Gao, Z.M. Huang, Y. Hou, J. Wu, Y.J. Ge, J.H. Chu, Appl. Phys. Lett. 94, 011106 (2009)CrossRefADSGoogle Scholar
  15. 15.
    R. Dannenberg, S. Baliga, R.J. Gambino, A.H. King, A.P. Doctor, J. Appl. Phys. 86, 2590 (1999)CrossRefADSGoogle Scholar
  16. 16.
    K.J. Kim, J.H. Lee, Solid State Commun. 141, 99 (2007)CrossRefADSGoogle Scholar
  17. 17.
    K.J. Kim, Y.R. Park, Solid State Commun. 127, 25 (2003)CrossRefADSGoogle Scholar
  18. 18.
    L.B. Zhang, Y. Hou, W. Zhou, Y.Q. Gao, J. Wu, Z.M. Huang et al., Solid State Commun. 159, 32 (2013)CrossRefADSGoogle Scholar
  19. 19.
    A. Diez, R. Schmidt, A.E. Sagua, M.A. Frechero, E. Matesanz, C. Leon, E. Moran, J. Eur. Ceram. Soc. 30, 2617 (2010)CrossRefGoogle Scholar
  20. 20.
    M.E. Striefler, S.I. Boldish, J Phys C Solid State 11, 237 (1978)CrossRefADSGoogle Scholar
  21. 21.
    X.B. Zhang et al., J. Electron. Mater. 46, 8 (2017)ADSGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • W. Zhou
    • 1
  • C. Y. Wu
    • 1
  • Y. M. Yin
    • 1
  • W. L. Ma
    • 1
  • Z. M. Huang
    • 1
    Email author
  1. 1.State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsShanghaiChina

Personalised recommendations