Applied Physics A

, 124:816 | Cite as

Orientation-dependent dielectric and ferroelectric properties of Pr3+-doped Na0.5Bi0.5TiO3 thin films

  • Wenhua Huang
  • Muhammad Ismail
  • Aize Hao
  • Shuai He
  • Santhosh Kumar Thatikonda
  • Xingru Du
  • Ni Qin
  • Dinghua BaoEmail author


Pr3+-doped Na0.5Bi0.5TiO3 (Pr-NBT) thin films with different preferred orientations including random, (100), and (110) orientations were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method combining with a rapid thermal annealing. Effects of the crystallographic orientation on the ferroelectric and dielectric properties of Pr-NBT thin films were investigated. XRD patterns revealed that the preferential orientation degrees of (100)- and (110)-oriented Pr-NBT thin films were 97% and 69%, respectively. The (100)-oriented Pr-NBT thin film has a higher dielectric constant of 1035 compared to the (110)- and randomly oriented ones. Furthermore, a large remnant polarization (2Pr = 31 µC/cm2) was obtained from the highly (100)-oriented Pr-NBT thin film, which is 1.55 times larger than that of the randomly oriented film. The quantitative relationship in dielectric constants between the (100)-, (110)-oriented, and randomly oriented Pr-NBT thin films was calculated using the dipole azimuth model. The calculated result was consistent with experimental measurements. The optimal dielectric tunable property (tunability = 40.8%, FoM = 10.2) is obtained from (100)-oriented films. The highly (100)-oriented Pr-NBT lead-free thin film is promising for use in integrated microelectronic devices.



The authors gratefully acknowledge financial support from National Natural Science Foundation of China (No. 51372281) and Natural Science Foundation of Guangdong Province, China (No. 2015A030311019).

Compliance with ethical standards

Conflict of interest

The authors declare that they have no conflict of interest.


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and EngineeringSun Yat-Sen UniversityGuangzhouChina

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