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Applied Physics A

, 124:591 | Cite as

Temperature and frequency dependence of dielectric relaxation and AC electrical conductivity in p-Si/CuPc hybrid photodiode

  • M. M. Shehata
  • K. Abdelhady
Article
  • 95 Downloads

Abstract

Thermal evaporation technique has been used to fabricate a hybrid heterojunction Al/p-Si/CuPc/Au photodiode by deposition of a CuPc thin film onto a p-Si substrate. The dark IV curves exhibit diode-like behavior. The impedance characteristics of the Al/p-Si/CuPc/Au hybrid heterojunction were examined using complex impedance spectroscopy. In the investigated device, the activation energies have been obtained from Arrhenius plotting of two relaxation processes. The Cole–Cole plot and the electrical conductivity were reported and showed that the heterostructure possesses a negative temperature coefficient of resistance. The excess minority carrier lifetimes, the diffusion coefficients and the mobilities of charge carriers at two interfaces were calculated and interpreted. From the impedance spectra analysis, the band profile of the studied device can be fully determined.

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Physics Department, Faculty of ScienceMinia UniversityEl MinyaEgypt

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