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A selector device based on graphene–oxide heterostructures for memristor crossbar applications

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Abstract

Most of the potential applications of memristive devices adopt crossbar architecture for ultra-high density. One of the biggest challenges of the crossbar architecture is severe residue leakage current (sneak path) issue. A possible solution is introducing a selector device with strong nonlinear current–voltage (I–V) characteristics in series with each memristor in crossbar arrays. Here, we demonstrate a novel selector device based on graphene–oxide heterostructures, which successfully converts a typical linear TaO x memristor into a nonlinear device. The origin of the nonlinearity in the heterostructures is studied in detail, which highlights an important role of the graphene–oxide interfaces.

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China

    Miao Wang, Xiaojuan Lian, Yiming Pan, Junwen Zeng, Chengyu Wang, Erfu Liu, Baigeng Wang, Feng Miao & Dingyu Xing

  2. Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA

    J. Joshua Yang

Authors
  1. Miao Wang
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  2. Xiaojuan Lian
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  3. Yiming Pan
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  4. Junwen Zeng
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  5. Chengyu Wang
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  7. Baigeng Wang
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  8. J. Joshua Yang
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  9. Feng Miao
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  10. Dingyu Xing
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Correspondence to Feng Miao.

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Wang, M., Lian, X., Pan, Y. et al. A selector device based on graphene–oxide heterostructures for memristor crossbar applications. Appl. Phys. A 120, 403–407 (2015). https://doi.org/10.1007/s00339-015-9208-y

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  • DOI: https://doi.org/10.1007/s00339-015-9208-y

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