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Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface

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Abstract

Anodic aluminum oxide (AAO) films with different porosities were fabricated on the surfaces of InGaN/GaN multiple quantum wells (MQWs). We measured the photoluminescence spectra of these samples and then calculated the light extraction enhancement factors (E). It was found that the light extraction of the MQWs with the AAO films has been greatly enhanced compared to the area without AAO coverage. The maximum value of E reaches 3.5 at a certain wavelength and 2.29 in the integral intensity. The increase of E with the decrease of the porosities demonstrates that the nano-hole structure in the AAO films plays an important role in enhancing the light extraction efficiency.

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Acknowledgements

This work is supported by Special Funds for the Major State Basic Research Project (2011CB301900), the National Natural Science Foundation of China (61176063, 60990311, 60820106003, 60906025 and 60936004), the Natural Science Foundation of Jiangsu province (BK2008019, BK2010385, BK2009255, BK2010178 and BK2011436) and the Research Funds from NJU—Yangzhou Institute of Optoelectronics.

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Authors and Affiliations

  1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronics Science and Engineering, Nanjing University, Nanjing, 210093, China

    Z. G. Yu, G. F. Yang, P. Chen, R. H. Liu, H. Zhao, B. Liu, X. M. Hua, Z. L. Xie, X. Q. Xiu, P. Han, H. Lu, R. Zhang & Y. D. Zheng

  2. Institute of Optoelectronics, Nanjing University and Yangzhou, Yangzhou, 225009, China

    P. Chen & X. Y. Song

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  1. Z. G. Yu
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Correspondence to P. Chen.

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Yu, Z.G., Yang, G.F., Chen, P. et al. Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface. Appl. Phys. A 110, 35–39 (2013). https://doi.org/10.1007/s00339-012-7410-8

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  • DOI: https://doi.org/10.1007/s00339-012-7410-8

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