Material removal mechanisms in chemical-magnetorheological compound finishing
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With a view to ultra-precision polishing of SiC wafers, the chemical-magnetorheological compound finishing (CMRF) method was proposed based on the principle of the Fenton reaction. To study material removal characteristics of CMRF, a force model for polishing pads based on magnetorheological (MR) effects was built. Through the theory of solid-phase particles, this study conducted a force analysis of carbonyl iron powders and abrasives and calculated polishing forces of a single polishing pad based on MR effects on a workpiece surface. Based on this, according to the Preston equation, a material removal model was established. By conducting the CMRF test on monocrystalline SiC wafers, it is found that the test results were consistent with theoretical calculations.
KeywordsChemical-magnetorheological compound finishing Modelling Polishing force Material removal SiC wafer
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This work was supported by the NSFC-Guangdong Joint Fund Project (Grant No. U1801259), Science and Technology Project of Guangdong Province (Grant No. 2016A010102014), and Guangdong Graduate Education Innovation Project (2018JGXM35, 2018SFKC15).
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