Micro-fabricated wideband band-stop filter using GaAs-based integrated passive device technology
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This paper presents a new concept of implementing a micro-fabricated wideband band-stop filter on a gallium arsenide (GaAs) substrate using integrated passive device technology. The incorporation of an air-bridge structure was explored to enhance design flexibility and achieve excellent radio-frequency performance of the filter. A wideband band-stop filter was realized on a GaAs substrate, generating an insertion loss of − 0.37 dB and a return loss of − 38 dB with excellent attenuation of − 28.78 and − 22.27 dB, in the lower and the upper passband, respectively. The filter resonates at 10.72 GHz, occupying a die area of 2000 μm × 1540 μm. The selectivity of the filter is reflected by its tremendous suppression of out-of-band signals with the existence of attenuation poles in the vicinity of the resonance frequency. Experimental verification of the filter response demonstrates its potential use as an on-chip device operating in the X-band frequency spectrum.
KeywordsRadio frequency (RF) Integrated passive device technology Wideband band-stop filter Gallium arsenide (GaAs) Micro-fabrication
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We are thankful to RFIC Center, Kwangwoon University, Seoul, Korea, for the measurement process.
This research was also supported by faculty research grant of Sejong University in 2018. This research was supported by a grant from the National Research Foundation of Korea (NRF), funded by the Korea Government (MISP) (2016R1A4A1011761).
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