In this paper, a two-dimensional axisymmetric quasic-static model for the chemical-mechanical polishing process (CMP) was established. Based on the principle of minimum total potential energy, a finite element model for CMP was thus established. In this model, the four-layer structures including the wafer carrier, the carrier film, the wafer and the pad are involved. The von Mises stress distributions on the wafer surface were analysed, and the effects of characteristics of the pad and the carrier film and the load of the carrier on the von Mises stress and nonuniformity on the wafer surface were investigated. The findings indicate that the profile of the von Mises stress distributions correlates with the removal rate profile. The elastic modulus and thickness of pad and carrier load would significantly affect the von Mises stress and nonuniformity, but those of the film did not affect very much.
This is a preview of subscription content, log in to check access.
Buy single article
Instant access to the full article PDF.
Price includes VAT for USA
Subscribe to journal
Immediate online access to all issues from 2019. Subscription will auto renew annually.
This is the net price. Taxes to be calculated in checkout.
Runnels SR, Renteln P (1993) Modeling the effect of polish pad deformation on wafer surface stress distributions during chemical-mechanical polishing. Dielect Sci Technol 6:110-121
Runnels SR, Eyman LM (1994) Tribology analysis of chemical-mechanical polishing. J Electrochem Soc 141(6):1698–1701
Kaanta CW, Landis HS (1991) Radial uniformity control of semiconductor wafer polishing. US Patent 5,036,630, 6 August 1991
Warnock J (1991) A two-dimensional process model for CMP planarization. J Electrochem Soc 138(8):2398–2402
Sivaram S, Tolles R, Bath H, Lee E, Leggett R (1992) Chemical mechanical polishing of inter-level dielectrics: models for removal rate and planarity. Technical Report, SEMATECH, Austin, TX
Wang D, Lee J, Holland K, Bibby T, Beaudoin S, Cale T (1997) Von Mises stress in chemical-mechanical polishing processes. J Electrochem Soc 144(3):1122–1127
Srinivasa-Murthy C, Wang D, Beaudoin SP, Bibby T, Holland K, Cale TS (1997) Stress distribution in chemical-mechanical polishing. Thin Solid Film 308:533–537
Lin YY, Lo SP (2003) Study on finite element model for chemical mechanical polishing process. Int J Adv Manufact Technol (in press)
Baker AR (1997) The origin of the edge effects in CMP. Proc Electrochem Soc 96(22):228–237
Preston F (1927) Optimization of computer controlled polishing. Glass Tech 11:214–219
Yu TK, Yu CC, Orlowski M (1993) A statistical polishing pad model for chemical-mechanical polishing. IEDM Tech Dig pp 865–868
Rao SS (1989) The finite element method in engineering. Pergamon, Oxford, UK
Galyer JFW, Shotbolt CR (1993) Metrology for engineers. Cassell, London
It is gratefully acknowledged that the National Science Council of the Republic of China provided funds (Grant No. NSC 90-2212-E-237-001) for the financial support of this work.
About this article
Cite this article
Lin, Y., Lo, S. A study on the stress and nonuniformity of the wafer surface for the chemical-mechanical polishing process. Int J Adv Manuf Technol 22, 401–409 (2003). https://doi.org/10.1007/s00170-003-1544-y
- Chemical-mechanical polishing
- Finite element method
- von Mises stress