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Heterojunction bipolar transistors for millimeter waves applications: trends and achievements

Transistors Bipolaires Á HÉtÉrojonction Pour Applications MillimÉtriques: Tendances et rÉsultats

Abstract

This paper first presents the present status of heterojunction bipolar transistors (HBT) under development obtained using either classical III-V based on GaAs or InP or SiGe compound semiconductors. Then a description of the developments to be achieved to allowing the use of HBT up to millimeter wave is carried out. The description is focused on material and process aspects. Afterwards the state of the art of HBT RF performances is made showing thatfmax up to 820 GHz have been already achieved by researchers from the University of California at Santa Barbara. This result is the highest f observed with any kind of transistors. The comparison of the different HBT technological solutions is presented followed by a short review of millimeter wave circuits already achieved.

Résumé

Cet article présente les performances des transistors bipolaires à hétérojonction (TBH) en cours de développement. Les composants considérés sont obtenus à ľaide ďhétérojonctions formées soit de matériaux semiconducteur III-V classiques à base de GaAs ou ďlnP, soit de SiGe. Ensuite une description des développements à mettre en œuvre pour permettre leur fonctionnement aux ondes millimétriques est réalisée. Cette description est focalisée sur les aspects matériaux et technologiques. Puis ľétat de ľart des performances hyperfréquences des différentes families de composants TBH est dressé où il apparaît que des fmax de 820 GHz ont été obtenues par des chercheurs de ľUniversité de Californie à Santa Barbara, ce qui correspond à un record surclassant tous les autres transistors. La comparaison des différentes families technologiques de TBH est ainsi réalisée et suivie par les plus récents résultats en circuits hyperfréquences à base de TBH.

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Correspondence to Sylvain L. Delage.

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Delage, S.L. Heterojunction bipolar transistors for millimeter waves applications: trends and achievements. Ann. Télécommun. 56, 5–14 (2001). https://doi.org/10.1007/BF03002981

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Key words

  • Bipolar transistor
  • Heterojunction transistor
  • Microwave transistor
  • Millimetric wave
  • III-V compound
  • Germanium silicon alloy
  • Properties of materials
  • Semiconductor technology
  • Semiconductor device
  • Electrical properties
  • Optimization

Mots clés

  • Transistor bipolaire
  • Transistor hétérojonction
  • Transistor hyperfréquences
  • Onde millimétrique
  • Composé III-V
  • Germanium silicium alliage
  • Propriété matériau
  • Technologie semiconducteur
  • Dispositif semiconducteur
  • Propriété électrique
  • Optimisation