Abstract
Ultrasonic Assisted SILAR method (UA-SILAR) was developed and highly oriented ZnO films were deposited on the glass substrate by this novel technique. The crystallinity and microstructure of as-deposited ZnO films were analyzed by means of XRD and SEM. Moreover, the underling deposition mechanism of ZnO films was discussed. Results show that obtained ZnO films exhibit an excellent crystallinity with the preferential orientation of (002) plane. The crystalline grain of films is about 40nm in size, which is supported by both the Sherrer equation and the SEM result. However, the ZnO film is composed of numerous clustered particulates in the size of 200 to 300nm, and each particulate is the compact aggregation of smaller ZnO crystalline grains. It is speculated that the excellent crystallinity of ZnO films may chiefly originate from the cavatition effect of the ultrasonic rinsing process.
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Financially supported by the Ministry of Science and Technology of China through 973-Project (No. 2002CB613306)
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Xiangdong, G., Xiaomin, L. & Weidong, Y. Preparation and characterization of highly oriented ZnO film by ultrasonic assisted SILAR method. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 20, 23–26 (2005). https://doi.org/10.1007/BF02835019
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DOI: https://doi.org/10.1007/BF02835019