Journal of Phase Equilibria

, Volume 14, Issue 4, pp 425–431 | Cite as

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices

  • F. H. Hayes
  • R. D. Longbottom
  • E. Ahmad
  • G. Chen
Section II: Basic and Applied Research


Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with previous work. Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynamic data, are given and compared to the experimental data. The computed sections are used to interpret results of vacuum brazing experiments in which Si discs were joined to Mo with an Al-Ge eutectic alloy.


Eutectic Temperature Braze Alloy Braze Temperature Braze Metal Braze Time 
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Copyright information

© ASM International 1993

Authors and Affiliations

  • F. H. Hayes
    • 1
  • R. D. Longbottom
    • 2
  • E. Ahmad
    • 3
  • G. Chen
    • 4
  1. 1.Materials Science CentreUniversity of Manchester and VMISTManchesterUK
  2. 2.Swinden LaboratoriesBritish Steel TechnicalRotherham
  3. 3.Pakistan Institute for Nuclear Science and TechnologyIslamabad
  4. 4.Avery DennisonAzusa

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