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Journal of Phase Equilibria

, Volume 14, Issue 4, pp 425–431 | Cite as

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices

  • F. H. Hayes
  • R. D. Longbottom
  • E. Ahmad
  • G. Chen
Section II: Basic and Applied Research

Abstract

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with previous work. Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynamic data, are given and compared to the experimental data. The computed sections are used to interpret results of vacuum brazing experiments in which Si discs were joined to Mo with an Al-Ge eutectic alloy.

Keywords

Eutectic Temperature Braze Alloy Braze Temperature Braze Metal Braze Time 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© ASM International 1993

Authors and Affiliations

  • F. H. Hayes
    • 1
  • R. D. Longbottom
    • 2
  • E. Ahmad
    • 3
  • G. Chen
    • 4
  1. 1.Materials Science CentreUniversity of Manchester and VMISTManchesterUK
  2. 2.Swinden LaboratoriesBritish Steel TechnicalRotherham
  3. 3.Pakistan Institute for Nuclear Science and TechnologyIslamabad
  4. 4.Avery DennisonAzusa

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